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|Title:||Tunneling behavior of bismuth telluride nanoplates in electrical transport||Authors:||Eginligil, M.
|Issue Date:||12-Sep-2012||Citation:||Eginligil, M., Zhang, W., Kalitsov, A., Lu, X., Yang, H. (2012-09-12). Tunneling behavior of bismuth telluride nanoplates in electrical transport. Chemical Physics Letters 546 : 125-128. ScholarBank@NUS Repository. https://doi.org/10.1016/j.cplett.2012.07.068||Abstract:||We study the electrical transport properties of ensembles of bismuth telluride (Bi 2Te 3) nanoplates grown by solution based chemical synthesis. Devices consisting of Bi 2Te 3 nanoplates are fabricated by surface treatment after dropping the solution on the structured gold plates and the temperature dependence of resistance shows a nonmetallic behavior. Symmetric tunneling behavior in I-V was observed in both our experimental results and theoretical calculation of surface conductance based on a simple Hamiltonian, which excludes carrier-carrier interactions. Here, we present two devices: one showing symmetric, the other showing a two-step tunneling behavior. The latter can be understood in terms of disorder. © 2012 Elsevier B.V. All rights reserved.||Source Title:||Chemical Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83229||ISSN:||00092614||DOI:||10.1016/j.cplett.2012.07.068|
|Appears in Collections:||Staff Publications|
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