Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.cplett.2012.07.068
Title: Tunneling behavior of bismuth telluride nanoplates in electrical transport
Authors: Eginligil, M.
Zhang, W.
Kalitsov, A.
Lu, X. 
Yang, H. 
Issue Date: 12-Sep-2012
Citation: Eginligil, M., Zhang, W., Kalitsov, A., Lu, X., Yang, H. (2012-09-12). Tunneling behavior of bismuth telluride nanoplates in electrical transport. Chemical Physics Letters 546 : 125-128. ScholarBank@NUS Repository. https://doi.org/10.1016/j.cplett.2012.07.068
Abstract: We study the electrical transport properties of ensembles of bismuth telluride (Bi 2Te 3) nanoplates grown by solution based chemical synthesis. Devices consisting of Bi 2Te 3 nanoplates are fabricated by surface treatment after dropping the solution on the structured gold plates and the temperature dependence of resistance shows a nonmetallic behavior. Symmetric tunneling behavior in I-V was observed in both our experimental results and theoretical calculation of surface conductance based on a simple Hamiltonian, which excludes carrier-carrier interactions. Here, we present two devices: one showing symmetric, the other showing a two-step tunneling behavior. The latter can be understood in terms of disorder. © 2012 Elsevier B.V. All rights reserved.
Source Title: Chemical Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83229
ISSN: 00092614
DOI: 10.1016/j.cplett.2012.07.068
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