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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Type:  Article
Date Issued:  [2000 TO 2009]
Author:  Lee, R.T.-P.

Results 1-20 of 32 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1Feb-2008A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFETTan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
2Apr-2008Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widthsLee, R.T.-P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Koh, A.T.-Y.; Zhu, M. ; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
32009Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregationSinha, M.; Lee, R.T.P. ; Lohani, A.; Mhaisalkar, S.; Chor, E.F. ; Yeo, Y.-C. 
4Jul-2008Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistorsTan, K.-M.; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.-P. ; Balasubramanian, N.; Yeo, Y.-C. 
5Sep-2006Drive-current enhancement in FinFETs using gate-induced stressTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
62009Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon filmsLim, P.S.Y.; Lee, R.T.P. ; Sinha, M.; Chi, D.Z.; Yeo, Y.-C. 
725-Apr-2008Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reductionLim, A.E.-J.; Lee, R.T.P. ; Koh, A.T.Y.; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
8Apr-2006Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applicationsLim, A.E.-J.; Lee, R.T.P. ; Tung, C.H.; Tripathy, S.; Kwong, D.-L.; Yeo, Y.-C. 
9Jul-2008Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Tan, B.L.-H.; Balasubramanian, N.; Yeo, Y.-C. 
102007Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G. ; Kwong, D.-L. ; Yeo, Y.-C. 
11Aug-2008Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interfaceLim, A.E.-J.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C. 
12Nov-2007N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layerLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
13Feb-2007N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicideLee, R.T.P. ; Lim, A.E.-J.; Tan, K.-M.; Liow, T.-Y.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
142008Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistorsKoh, A.T.-Y.; Lee, R.T.-P. ; Lim, A.E.-J.; Lai, D.M.-Y.; Chi, D.-Z.; Hoe, K.-M.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
15Jan-2008Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drainLee, R.T.P. ; Yang, L.-T.; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Ang, K.-W.; Lai, D.M.Y.; Hoe, K.M.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
1625-Apr-2008Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistorTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
172008Novel rare-earth dielectric interlayers for wide NMOS work-function tunability in Ni-FUSI gatesLim, A.E.-J.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C. 
18May-2008P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performanceLee, R.T.-P. ; Tan, K.-M.; Lim, A.E.-J.; Liow, T.-Y.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
192009Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drainTan, K.-M.; Yang, M.; Fang, W.-W.; Lim, A.E.-J.; Lee, R.T.-P. ; Liow, T.-Y.; Yeo, Y.-C. 
202009Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)Lee, R.T.P. ; Chi, D.Z.; Yeo, Y.-C.