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Ling Chung Ho

rp09495

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Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
Main Affiliation
 
Faculty
 
Email
eleling@nus.edu.sg
 

Publications

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Type:  Article

Results 21-40 of 84 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
21Oct-2000Comparative study of radiation- and stress-induced leakage currents in thin gate oxidesAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
221-Jul-2000Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradationCho, B.J. ; Kim, S.J. ; Ling, C.H. ; Joo, M.-S.; Yeo, I.-S.
23Jul-1985COMPUTATION OF ELECTRON AND HOLE QUASI-FERMI LEVELS IN POLYCRYSTALLINE SILICON FILMS UNDER UNIFORM ILLUMINATION AND ZERO BIAS.Ling, Chung Ho 
24May-1996Determination of LDD MOSFET drain resistance from device simulationSamudra, G.S. ; Seah, B.P.; Ling, C.H. 
252000Does short wavelength lithography process degrade the integrity of thin gate oxide?Kim, S.J. ; Cho, B.J. ; Chong, P.F.; Chor, E.F. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
26Sep-1985EFFECT OF OXYGEN INCORPORATION OF BHF ETCH RATE OF PLASMA-ENHANCED CVD SILICON NITRIDE FILMS PREPARED IN THE TEMPERATURE RANGE 50-300 degree C.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
27Aug-1995Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET'sLing, C.H. ; Ang, D.S. ; Tan, S.E.
281-Dec-1996Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET'sAng, D.S. ; Ling, C.H. 
291996Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitorsLing, C.H. ; Ooi, J.A.; Ang, D.S. 
30Jul-1985Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computationLing, C.H. ; Kwok, C.Y.
311-Oct-1993Electron trapping and interface state generation in PMOSFET's: Results from gate capacitanceLing, C.H. 
32Dec-2004Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFETAng, D.S.; Liao, H.; Phua, T.W.H.; Ling, C.H. 
33Dec-2005Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFETAng, D.S.; Wang, S.; Ling, C.H. 
3415-Feb-1996Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitanceLing, C.H. ; Ang, D.S. ; Dutoit, M.
351997Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping currentLing, C.H. ; Goh, Y.H.; Ooi, J.A.
36Sep-1986Frequency dependence of MOS capacitance in strong inversion and at elevated temperaturesLing, C.H. ; Kwok, C.Y.; Chan, E.G.; Tay, T.M.
37Sep-1986Frequency dependence of MOS capacitance in strong inversion and at elevated temperaturesLing, C.H. ; Kwok, C.Y.; Chan, E.G.; Tay, T.M.
38Feb-2001Gate-channel capacitance characteristics in the fully-depleted SOI MOSFETCheng, Z.-Y. ; Ling, C.H. 
39Feb-2001Gate-channel capacitance characteristics in the fully-depleted SOI MOSFETCheng, Z.-Y. ; Ling, C.H. 
40Nov-2001Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear regionAng, D.S. ; Lun, Z. ; Ling, C.H.