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Ling Chung Ho

rp09495

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Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
Main Affiliation
 
Faculty
 
Email
eleling@nus.edu.sg
 

Publications

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Type:  Article

Results 61-80 of 84 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
611995Recombination lifetime in silicon from laser microwave photoconductance decay measurementLing, C.H. ; Teoh, H.K.; Choi, W.K. ; Zhou, T.Q. ; Ah, L.K.
622000Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate biasAng, Chew-Hoe; Ling, Chung-Ho ; Cheng, Zhi-Yuan ; Kim, Sun-Jung ; Cho, Byung-Jin 
63May-1985RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.Ling, C.H. ; Kwok, C.Y.; Prasad; K.
64May-1985RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.Ling, C.H. ; Kwok, C.Y.; Prasad; K.
65Mar-1987Relaxation of trapped charge at silicon grain boundary statesLing, C.H. ; Kwok, C.Y.; Woo, P.K.
66Mar-1987Relaxation of trapped charge at silicon grain boundary statesLing, C.H. ; Kwok, C.Y.; Woo, P.K.
67Apr-2001Reliability of thin gate oxides irradiated under X-ray lithography conditionsCho, B.J. ; Kim, S.J. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
68Aug-2008Self-heating-induced spatial spread of interface state generation by hot-electron effect: Role of the high-energy tail electronAng, D.S.; Phua, T.W.H.; Ling, C.H. 
69Oct-1986SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
70Oct-1986SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.Ling, C.H. ; Kwok, C.Y.; Prasad, K.
711995Simulation of logarithmic time dependence of hot carrier degradation in PMOSFETsLing, C.H. ; Samudra, G.S. ; Seah, B.P.
72Dec-1995Simulation of logarithmic time dependence of hot carrier degradation in PMOSFETsLing, C.H. ; Samudra, G.S. ; Seah, B.P.
73May-1991Some characteristics of the zero-temperature-coefficient capacitance of an MOS capacitor in accumulationLing, C.H. 
74Jan-2000Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFETCheng, Zhi-Yuan ; Ling, C.H. 
751995Structural and electrical studies of radio frequency sputtered hydrogenated amorphous silicon carbide filmsChoi, W.K. ; Loo, F.L.; Ling, C.H. ; Loh, F.C. ; Tan, K.L. 
761995Structural properties of amorphous silicon carbide films by plasma-enhanced chemical vapor depositionChoi, W.K. ; Chan, Y.M.; Ling, C.H. ; Lee, Y.; Gopalakrishnan, R. ; Tan, K.L. 
77Jul-1995Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping currentLing, C.H. ; Tan, S.E.; Ang, D.S. 
78Jun-1995Study of hot-carrier degradation in submicrometer LDD NMOSFET's from 1 f noise and charge pumping current measurements at different temperature annealsAng, D.S. ; Ling, C.H. ; Yeow, Y.T.
791995Study of rf-sputtered yttrium oxide films on silicon by capacitance measurementsLing, C.H. ; Bhaskaran, J.; Choi, W.K. ; Ah, L.K.
801999Teaching semiconductor device physics with two-dimensional numerical solverYeow, Y.T.; Ling, C.H.