Study of hot-carrier degradation in submicrometer LDD NMOSFET's from 1 f noise and charge pumping current measurements at different temperature anneals

Abstract

The 1 f noise and variable frequency charge pumping current are used to probe hot-carrier induced oxide and interface traps. A strong correlation between the noise and charge pumping data is observed, confirming carrier capture by near-interface traps as the physical origin of 1 f noise in MOS transistors. Results also suggest an oxide trap density that decreases with distance from the interface, and increases with energy from mid bandgap to the Si conduction band edge. © 1995.