Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62824
Title: Study of hot-carrier degradation in submicrometer LDD NMOSFET's from 1 f noise and charge pumping current measurements at different temperature anneals
Authors: Ang, D.S. 
Ling, C.H. 
Yeow, Y.T.
Issue Date: Jun-1995
Citation: Ang, D.S.,Ling, C.H.,Yeow, Y.T. (1995-06). Study of hot-carrier degradation in submicrometer LDD NMOSFET's from 1 f noise and charge pumping current measurements at different temperature anneals. Microelectronic Engineering 28 (1-4) : 257-260. ScholarBank@NUS Repository.
Abstract: The 1 f noise and variable frequency charge pumping current are used to probe hot-carrier induced oxide and interface traps. A strong correlation between the noise and charge pumping data is observed, confirming carrier capture by near-interface traps as the physical origin of 1 f noise in MOS transistors. Results also suggest an oxide trap density that decreases with distance from the interface, and increases with energy from mid bandgap to the Si conduction band edge. © 1995.
Source Title: Microelectronic Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/62824
ISSN: 01679317
Appears in Collections:Staff Publications

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