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|Title:||Recombination lifetime in silicon from laser microwave photoconductance decay measurement||Authors:||Ling, C.H.
|Issue Date:||1995||Citation:||Ling, C.H.,Teoh, H.K.,Choi, W.K.,Zhou, T.Q.,Ah, L.K. (1995). Recombination lifetime in silicon from laser microwave photoconductance decay measurement. Materials Science Forum 173-174 : 255-258. ScholarBank@NUS Repository.||Abstract:||The effective minority carrier recombination lifetime in oxidized silicon wafers is measured using a laser microwave photoconductance technique. The effect of surface recombination is demonstrated through altering the silicon band bending at the oxide/silicon interface, through a non-contact injection of charges on the outer oxide surface by a corona discharge. The dependence of effective lifetime on wafer orientation and oxidation conditions is investigated.||Source Title:||Materials Science Forum||URI:||http://scholarbank.nus.edu.sg/handle/10635/81064||ISSN:||02555476|
|Appears in Collections:||Staff Publications|
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