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|Title:||Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET||Authors:||Cheng, Z.-Y.
|Issue Date:||Feb-2001||Citation:||Cheng, Z.-Y., Ling, C.H. (2001-02). Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET. IEEE Transactions on Electron Devices 48 (2) : 388-391. ScholarBank@NUS Repository. https://doi.org/10.1109/16.902743||Abstract:||A gate-channel capacitance minimum occurs in the capacitance-voltage (C-V) curve of a fully-depleted SOI MOSFET, when the front silicon surface is biased into accumulation while the back surface is maintained in strong inversion. This observation is explained in terms of a model based on the depletion width of the silicon film, taking into account the small accumulation and inversion layer thickness. A simple method is proposed to determine the flat-band potential in the SOI MOSFET.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/56114||ISSN:||00189383||DOI:||10.1109/16.902743|
|Appears in Collections:||Staff Publications|
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