Please use this identifier to cite or link to this item:
https://doi.org/10.1109/55.962658
Title: | Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region | Authors: | Ang, D.S. Lun, Z. Ling, C.H. |
Keywords: | Generation-recombination noise Lorentzian Low-frequency noise SIMOX SOI |
Issue Date: | Nov-2001 | Citation: | Ang, D.S., Lun, Z., Ling, C.H. (2001-11). Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region. IEEE Electron Device Letters 22 (11) : 545-547. ScholarBank@NUS Repository. https://doi.org/10.1109/55.962658 | Abstract: | Noise measurements in the linear region of the device characteristics of a SIMOX N-MOSFET show the evolution of an important low-frequency Lorentzian-like noise, during the transition from fully depleted to near fully depleted or partially depleted operation. In the kink region, the same low-frequency noise component co-exists with the high-frequency Lorentzian-like noise due to impact ionization. For this low-frequency noise component, a generation-recombination origin is proposed and supported with experimental evidence that indicates the involvement of deep-level bulk traps, possibly related to oxygen impurities, in the depleted silicon film. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/56126 | ISSN: | 07413106 | DOI: | 10.1109/55.962658 |
Appears in Collections: | Staff Publications |
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