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|Title:||Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region||Authors:||Ang, D.S.
|Issue Date:||Nov-2001||Citation:||Ang, D.S., Lun, Z., Ling, C.H. (2001-11). Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region. IEEE Electron Device Letters 22 (11) : 545-547. ScholarBank@NUS Repository. https://doi.org/10.1109/55.962658||Abstract:||Noise measurements in the linear region of the device characteristics of a SIMOX N-MOSFET show the evolution of an important low-frequency Lorentzian-like noise, during the transition from fully depleted to near fully depleted or partially depleted operation. In the kink region, the same low-frequency noise component co-exists with the high-frequency Lorentzian-like noise due to impact ionization. For this low-frequency noise component, a generation-recombination origin is proposed and supported with experimental evidence that indicates the involvement of deep-level bulk traps, possibly related to oxygen impurities, in the depleted silicon film.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/56126||ISSN:||07413106||DOI:||10.1109/55.962658|
|Appears in Collections:||Staff Publications|
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