Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.962658
Title: Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region
Authors: Ang, D.S. 
Lun, Z. 
Ling, C.H. 
Keywords: Generation-recombination noise
Lorentzian
Low-frequency noise
SIMOX
SOI
Issue Date: Nov-2001
Source: Ang, D.S., Lun, Z., Ling, C.H. (2001-11). Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region. IEEE Electron Device Letters 22 (11) : 545-547. ScholarBank@NUS Repository. https://doi.org/10.1109/55.962658
Abstract: Noise measurements in the linear region of the device characteristics of a SIMOX N-MOSFET show the evolution of an important low-frequency Lorentzian-like noise, during the transition from fully depleted to near fully depleted or partially depleted operation. In the kink region, the same low-frequency noise component co-exists with the high-frequency Lorentzian-like noise due to impact ionization. For this low-frequency noise component, a generation-recombination origin is proposed and supported with experimental evidence that indicates the involvement of deep-level bulk traps, possibly related to oxygen impurities, in the depleted silicon film.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56126
ISSN: 07413106
DOI: 10.1109/55.962658
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