Please use this identifier to cite or link to this item:
|Title:||Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region|
|Authors:||Ang, D.S. |
|Source:||Ang, D.S., Lun, Z., Ling, C.H. (2001-11). Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region. IEEE Electron Device Letters 22 (11) : 545-547. ScholarBank@NUS Repository. https://doi.org/10.1109/55.962658|
|Abstract:||Noise measurements in the linear region of the device characteristics of a SIMOX N-MOSFET show the evolution of an important low-frequency Lorentzian-like noise, during the transition from fully depleted to near fully depleted or partially depleted operation. In the kink region, the same low-frequency noise component co-exists with the high-frequency Lorentzian-like noise due to impact ionization. For this low-frequency noise component, a generation-recombination origin is proposed and supported with experimental evidence that indicates the involvement of deep-level bulk traps, possibly related to oxygen impurities, in the depleted silicon film.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 13, 2017
WEB OF SCIENCETM
checked on Nov 14, 2017
checked on Dec 9, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.