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Ling Chung Ho

rp09495

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Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
Main Affiliation
 
Faculty
 
Email
eleling@nus.edu.sg
 

Publications

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Type:  Article

Results 41-60 of 84 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
41Dec-2003Generation-Recombination Noise in the Near Fully Depleted SIMOX SOI n-MOSFET - Physical Characteristics and ModelingAng, D.S.; Lun, Z. ; Ling, C.H. 
42Jun-2008Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layerZhang, G.; Yoo, W.J.; Ling, C.-H. 
43Jul-1994Hot-electron degradation in NMOSFET's: Results from temperature annealLing, C.H. ; Ah, L.K.; Choi, W.K. ; Tan, S.E.; Ang, D.S. 
441-Jan-1993Interfacial polarization in Al-Y2O3-SiO2-Si capacitorLing, C.H. 
451-Jan-1993Logarithmic time dependence of pMOSFET degradation observed from gate capacitanceLing, C.H. ; Yeow, Y.T.; Ah, L.K.; Yung, W.H.; Choi, W.K. 
46May-1995Measurement and simulation of hot carrier degradation in PMOSFET by gate capacitanceLing, C.H. ; Seah, B.P.; Samudra, Ganesh S. ; Gan, Chock H.
4710-Aug-1993Measurement of the current transient in Ta2O5 filmsSundaram, K.; Choi, W.K. ; Ling, C.H. 
481987Observation of a high-resistance to a low-resistance transition in a silicon bicrystalLing, C.H. 
491987Observation of a high-resistance to a low-resistance transition in a silicon bicrystalLing, C.H. 
50Jul-1991Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurementYeow, Y.T.; Ling, C.H. ; Ah, L.K.
51Jul-1991Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurementYeow, Y.T.; Ling, C.H. ; Ah, L.K.
52Nov-1989Observation of zero temperature coefficient of capacitance in the MOS capacitorLing, C.H. 
53Nov-1989Observation of zero temperature coefficient of capacitance in the MOS capacitorLing, C.H. 
54Sep-1999On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stressAng, D.S. ; Ling, C.H. 
551985Quasi-Fermi level variation in the space-charge region of a grain boundaryLing, C.H. ; Kwok, C.Y.; Tay, T.M.
561-Jan-1985QUASI-FERMI LEVEL VARIATION IN THE SPACE-CHARGE REGION OF A GRAIN BOUNDARY.Ling, C.H. ; Kwok, C.Y.; Tay, T.M.
5710-Aug-1993Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/SiSundaram, K.; Choi, W.K. ; Ling, C.H. 
581-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
591-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
601995Recombination lifetime in silicon from laser microwave photoconductance decay measurementLing, C.H. ; Teoh, H.K.; Choi, W.K. ; Zhou, T.Q. ; Ah, L.K.