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|Title:||Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer||Authors:||Zhang, G.
|Keywords:||Channel hot-electron injection (CHEI)
Polysilicon-oxide-nitride-oxide-silicon (SONOS) Flash memory
|Issue Date:||Jun-2008||Citation:||Zhang, G., Yoo, W.J., Ling, C.-H. (2008-06). Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layer. IEEE Transactions on Electron Devices 55 (6) : 1502-1510. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.922854||Abstract:||In this paper, electron-energy- and lattice-temperature-dependent hot-electron-capture properties have been investigated for polysilicon-oxide-nitride-oxide-silicon-type Flash memories using a Si3N4 and high-dielectric-constant (k) ZrO2/HfO2 charge trapping layer when channel hot-electron injection is applied for programming. Hot-electron-capture rate is extracted by using an electrical method for various devices, and its lattice-temperature dependence indicates that inelastic phonon scattering may be the dominant mechanism of hot-electron relaxation. Memory device using a ZrO2 charge trapping layer shows enhanced electron capture from extended SixZr1-x) O2 interface of ∼2 nm due to more sufficient scattering, and the programming speed of ZrO2 device is enhanced as compared to HfO2 by × 2.2 times and by ∼3.2 times. Capabilities of low-voltage operation and improved endurance property are also demonstrated for ZrO2 device as compared to the other contending NOR -type devices. © 2008 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/82476||ISSN:||00189383||DOI:||10.1109/TED.2008.922854|
|Appears in Collections:||Staff Publications|
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