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https://doi.org/10.1063/1.339104
| Title: | Observation of a high-resistance to a low-resistance transition in a silicon bicrystal | Authors: | Ling, C.H. | Issue Date: | 1987 | Citation: | Ling, C.H. (1987). Observation of a high-resistance to a low-resistance transition in a silicon bicrystal. Journal of Applied Physics 62 (10) : 4291-4293. ScholarBank@NUS Repository. https://doi.org/10.1063/1.339104 | Abstract: | The transition from a high-resistance to a low-resistance state has been observed in a silicon bicrystal. This phenomenon is attributed to the trapping of minority carriers at the grain-boundary interface states. In the low-resistance state, the dc resistance of different samples falls into a narrow range of values, and exhibits, in addition, a positive temperature coefficient. | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/80849 | ISSN: | 00218979 | DOI: | 10.1063/1.339104 |
| Appears in Collections: | Staff Publications |
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