Recombination lifetime in silicon from laser microwave photoconductance decay measurement

Abstract

The effective minority carrier recombination lifetime in oxidized silicon wafers is measured using a laser microwave photoconductance technique. The effect of surface recombination is demonstrated through altering the silicon band bending at the oxide/silicon interface, through a non-contact injection of charges on the outer oxide surface by a corona discharge. The dependence of effective lifetime on wafer orientation and oxidation conditions is investigated.