Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62685
Title: Recombination lifetime in silicon from laser microwave photoconductance decay measurement
Authors: Ling, C.H. 
Teoh, H.K.
Choi, W.K. 
Zhou, T.Q. 
Ah, L.K.
Issue Date: 1995
Citation: Ling, C.H.,Teoh, H.K.,Choi, W.K.,Zhou, T.Q.,Ah, L.K. (1995). Recombination lifetime in silicon from laser microwave photoconductance decay measurement. Materials Science Forum 173-174 : 255-258. ScholarBank@NUS Repository.
Abstract: The effective minority carrier recombination lifetime in oxidized silicon wafers is measured using a laser microwave photoconductance technique. The effect of surface recombination is demonstrated through altering the silicon band bending at the oxide/silicon interface, through a non-contact injection of charges on the outer oxide surface by a corona discharge. The dependence of effective lifetime on wafer orientation and oxidation conditions is investigated.
Source Title: Materials Science Forum
URI: http://scholarbank.nus.edu.sg/handle/10635/62685
ISSN: 02555476
Appears in Collections:Staff Publications

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