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|Title:||Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/Si||Authors:||Sundaram, K.
|Issue Date:||10-Aug-1993||Citation:||Sundaram, K.,Choi, W.K.,Ling, C.H. (1993-08-10). Quasi-static and high frequency C-V measurements on Al/Ta2O5/SiO2/Si. Thin Solid Films 230 (2) : 145-149. ScholarBank@NUS Repository.||Abstract:||Quasi-static and high frequency capacitance-voltage (C-V) measurements of Al/Ta2O5/SiO2/Si (MTOS) capacitors are analysed. Space charge build-up at the Ta2O5-SiO2 interface and the frequency response of these charges are explained. It is also found that the leakage current is not the sole contributor to the discrepancies observed in quasi-static measurements, as suggested in the literature. An estimate of the interface charge is also presented. © 1993.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/81037||ISSN:||00406090|
|Appears in Collections:||Staff Publications|
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