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| | Issue Date | Title | Author(s) |
| 1 | Mar-1997 | Application of semiconducting low temperature grown GaAs to improve laser diodes grown on Si substrates | Phua, C.C.; Chong, T.C. ; Lau, W.S. ; Zhao, R.; Lu, D. ; Goo, C.H.; Tan, L.S. |
| 2 | 3-Jul-1997 | Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator | Rao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Lim, N. |
| 3 | Feb-1995 | Characterization of defect states responsible for leakage current in tantalum pentoxide films for very-high-density dynamic random access memory (DRAM) applications | Lau, Wai Shing ; Tan, Thiam Siew; Sandler, Nathan P.; Page, Barry S. |
| 4 | 1-Nov-1991 | Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique | Lau, Wai Shing ; Chong, Tow Chong ; Tan, Leng Seow ; Goo, Chuen Hang; Goh, Kian Seng |
| 5 | 1-Dec-1991 | Confirmation of the correlation between the electrical hysteresis and silicon dangling bond density in silicon nitride by UV irradiation of nearly hysteresis free metal-nitride-silicon capacitors | Lau, W.S. ; Goo, C.H. |
| 6 | 1-Jun-1996 | Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate | Lau, W.S. ; Khaw, K.K.; Qian, P.W.; Sandler, N.P.; Chu, P.K. |
| 7 | 28-Jul-1997 | Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy | Lau, W.S. ; Zhong, L.; Lee, A.; See, C.H.; Han, T.; Sandier, N.P.; Chong, T.C. |
| 8 | 4-Nov-1996 | Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructures | Du, A.Y.; Li, M.F. ; Chong, T.C. ; Teo, K.L. ; Lau, W.S. ; Zhang, Z. |
| 9 | 1999 | Effect of LT-layer thickness on the performance of LT-GaAs and LT-Al0.3Ga0.7As MISFETs | Rao, Rapeta V.V.V.J. ; Chongt, T.C.; Tan, L.S. ; Lau, W.S. |
| 10 | 1999 | Effects of thermal stress on low-temperature-grown GaAs and Al0.3Ga0.7As MISFET parameters | Rao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. |
| 11 | 1997 | Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors | Lau, W.S. ; Qian, P.W.; Sandler, N.P.; McKinley, K.A.; Chu, P.K. |
| 12 | 1996 | High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy | Goo, C.H.; Lau, W.S. ; Chong, T.C. ; Tan, L.S. ; Chu, P.K. |
| 13 | May-1990 | Identification and suppression of defects responsible for electrical hysteresis in metal-nitride-silicon capacitors | Lau, W.S. |
| 14 | 1994 | Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer | Phua, Cheng Chiang; Chong, Tow Chong ; Lau, Wai Shing |
| 15 | 1994 | Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer | Phua, Cheng Chiang; Chong, Tow Chong ; Lau, Wai Shing |
| 16 | 15-Oct-1998 | Low frequency noise analysis of LT-GaAs and LT-AI0.3Ga0.7 As MISFET active layers | Rao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Geng, C. ; Lim, N. |
| 17 | Feb-1996 | New developments in beam induced current methods for the failure analysis of VLSI circuits | Chan, D.S.H. ; Phang, J.C.H. ; Lau, W.S. ; Ong, V.K.S. ; Sane, V. ; Kolachina, S.; Osipowicz, T. ; Watt, F. |
| 18 | 1997 | New electron and hole traps in GaAsP alloy | Teo, K.L. ; Li, M.F. ; Goo, C.H.; Lau, W.S. ; Lim, Y.T. |
| 19 | 1994 | Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers | Tan, Leng Seow ; Lau, Wai Shing ; Samudra, Ganesh Shankar ; Lee, Kin Man; Ang, Boon Yong |
| 20 | 1994 | Numerical simulation of backgating suppression in high electron mobility transistors (HEMTs) with a low temperature molecular beam epitaxy (MBE)-grown gallium arsenide buffer layer between the substrate and active layers | Tan, Leng Seow ; Lau, Wai Shing ; Samudra, Ganesh Shankar ; Lee, Kin Man; Ang, Boon Yong |
