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|Title:||Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer||Authors:||Phua, Cheng Chiang
Chong, Tow Chong
Lau, Wai Shing
|Issue Date:||1994||Citation:||Phua, Cheng Chiang,Chong, Tow Chong,Lau, Wai Shing (1994). Improved crystalline quality of molecular beam epitaxy grown GaAs-on-Si epilayer through the use of low-temperature GaAs intermediate layer. Japanese Journal of Applied Physics, Part 2: Letters 33 (3 B) : L405-L408. ScholarBank@NUS Repository.||Abstract:||Improvements in crystalline quality of GaAs epilayers on Si have been achieved through the use of low-temperature (LT) GaAs intermediate layer grown at 230°C. The use of this LT-GaAs intermediate layer between the GaAs nucleation layer and the GaAs overlayer has improved the photoluminescence (PL) peak intensity by about five times, and reduced the GaAs (004) X-ray diffraction full width at half maximum (FWHM) by 59 arcsecs. The PL results were subsequently confirmed by cathodoluminescence images.||Source Title:||Japanese Journal of Applied Physics, Part 2: Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/62310||ISSN:||00214922|
|Appears in Collections:||Staff Publications|
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