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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2021]
Author:  Kwong, D.-L.
Author:  Balasubramanian, N.

Results 1-16 of 16 (Search time: 0.009 seconds).

Issue DateTitleAuthor(s)
12004A novel surface passivation process for HfO 2 Ge MOSFETsWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Du, A.Y.; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
2Sep-2004A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivationWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Du, A.; Balasubramanian, N.; Li, M.F. ; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
31-Nov-2004Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Chin, A.; Kwong, D.-L.
4Nov-2007CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixingRen, C.; Chan, D.S.H. ; Loh, W.Y.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
52007CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixingRen, C.; Chan, D.S.H. ; Loh, W.Y.; Peng, J.W.; Balakumar, S.; Jiang, Y.; Tung, C.H.; Du, A.Y.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.-L.
610-May-2004Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrateWu, N.; Zhang, Q.; Zhu, C. ; Yeo, C.C.; Whang, S.J. ; Chan, D.S.H. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.; Du, A.Y.; Tung, C.H.; Balasubramanian, N.
7Oct-2003Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD processJoo, M.S. ; Cho, B.J. ; Yeo, C.C.; Chan, D.S.H. ; Whoang, S.J.; Mathew, S.; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
824-May-2004Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applicationsGupta, R.; Yoo, W.J. ; Wang, Y.; Tan, Z.; Samudra, G. ; Lee, S. ; Chan, D.S.H. ; Loh, K.P. ; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
92005Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devicesRen, C.; Chan, D.S.H. ; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Kwong, D.-L.
1015-Aug-2005Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistorsRen, C.; Chan, D.S.H. ; Wang, X.P.; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Huan, A.C.H.; Kwong, D.-L.
11Sep-2006Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow bodyLim, Y.F.; Xiong, Y.Z.; Singh, N.; Yang, R.; Jiang, Y.; Chan, D.S.H. ; Loh, W.Y.; Bera, L.K.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
122006Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technologyYang, R.; Loh, W.Y.; Yu, M.B.; Xiong, Y-.Z.; Choy, S.F.; Jiang, Y.; Chan, D.S.H. ; Lim, Y.F.; Bera, L.K.; Wong, L.Y.; Li, W.H.; Du, A.Y.; Tung, C.H.; Hoe, K.M.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
13Feb-2005Thermally robust TaTbxN metal gate electrode for n-MOSFETs applicationsRen, C.; Yu, H.Y. ; Wang, X.P.; Ma, H.H.H. ; Chan, D.S.H. ; Li, M.-F. ; Yeo, Y.-C. ; Tung, C.H.; Balasubramanian, N.; Huan, A.C.H.; Pan, J.S.; Kwong, D.-L.
14Aug-2006Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applicationsRen, C.; Chan, D.S.H. ; Li, M.-F. ; Loh, W.-Y.; Balakumar, S.; Tung, C.H.; Balasubramanian, N.; Kwong, D.-L.
1510-May-2006Work function tuning of metal nitride electrodes for advanced CMOS devicesRen, C.; Faizhal, B.B.; Chan, D.S.H. ; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Balasubramanian, N.; Kwong, D.-L.
162006Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS processRen, C.; Chan, D.S.H. ; Loh, W.Y.; Balakumar, S.; Du, A.Y.; Tung, C.H.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.-L.