Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2004.841469
Title: | Thermally robust TaTbxN metal gate electrode for n-MOSFETs applications | Authors: | Ren, C. Yu, H.Y. Wang, X.P. Ma, H.H.H. Chan, D.S.H. Li, M.-F. Yeo, Y.-C. Tung, C.H. Balasubramanian, N. Huan, A.C.H. Pan, J.S. Kwong, D.-L. |
Keywords: | CMOS Dual-metal gate N-type TaTbxN Thermal stability |
Issue Date: | Feb-2005 | Citation: | Ren, C., Yu, H.Y., Wang, X.P., Ma, H.H.H., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Tung, C.H., Balasubramanian, N., Huan, A.C.H., Pan, J.S., Kwong, D.-L. (2005-02). Thermally robust TaTbxN metal gate electrode for n-MOSFETs applications. IEEE Electron Device Letters 26 (2) : 75-77. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.841469 | Abstract: | In this letter, we study Terbium (Tb)-incorporated TaN (TaTb xN) as a thermally robust N-type metal gate electrode for the first time. The work function of the Ta0.94Tb 0.06Ny metal gate is determined to be ∼ 4.23 eV after rapid thermal anneal at 1000 °C for 30 s, and can be further tuned by varying the Tb concentration. Moreover, the TaTb xN-SiO2 gate stack exhibits excellent thermal stability up to 1000 °C with no degradation to the equivalent oxide thickness, gate leakage, and time-dependent dielectric breakdown (TDDB) characteristics. These results suggest that Tb-incorporated TaN (TaTbxN) could be a promising metal gate candidate for n-MOSFET in a dual-metal gate Si CMOS process. © 2005 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/83197 | ISSN: | 07413106 | DOI: | 10.1109/LED.2004.841469 |
Appears in Collections: | Staff Publications |
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