Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.841469
Title: Thermally robust TaTbxN metal gate electrode for n-MOSFETs applications
Authors: Ren, C.
Yu, H.Y. 
Wang, X.P.
Ma, H.H.H. 
Chan, D.S.H. 
Li, M.-F. 
Yeo, Y.-C. 
Tung, C.H.
Balasubramanian, N.
Huan, A.C.H.
Pan, J.S.
Kwong, D.-L.
Keywords: CMOS
Dual-metal gate
N-type
TaTbxN
Thermal stability
Issue Date: Feb-2005
Citation: Ren, C., Yu, H.Y., Wang, X.P., Ma, H.H.H., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Tung, C.H., Balasubramanian, N., Huan, A.C.H., Pan, J.S., Kwong, D.-L. (2005-02). Thermally robust TaTbxN metal gate electrode for n-MOSFETs applications. IEEE Electron Device Letters 26 (2) : 75-77. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.841469
Abstract: In this letter, we study Terbium (Tb)-incorporated TaN (TaTb xN) as a thermally robust N-type metal gate electrode for the first time. The work function of the Ta0.94Tb 0.06Ny metal gate is determined to be ∼ 4.23 eV after rapid thermal anneal at 1000 °C for 30 s, and can be further tuned by varying the Tb concentration. Moreover, the TaTb xN-SiO2 gate stack exhibits excellent thermal stability up to 1000 °C with no degradation to the equivalent oxide thickness, gate leakage, and time-dependent dielectric breakdown (TDDB) characteristics. These results suggest that Tb-incorporated TaN (TaTbxN) could be a promising metal gate candidate for n-MOSFET in a dual-metal gate Si CMOS process. © 2005 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83197
ISSN: 07413106
DOI: 10.1109/LED.2004.841469
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