Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.841469
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dc.titleThermally robust TaTbxN metal gate electrode for n-MOSFETs applications
dc.contributor.authorRen, C.
dc.contributor.authorYu, H.Y.
dc.contributor.authorWang, X.P.
dc.contributor.authorMa, H.H.H.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorLi, M.-F.
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorTung, C.H.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorHuan, A.C.H.
dc.contributor.authorPan, J.S.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:38:26Z
dc.date.available2014-10-07T04:38:26Z
dc.date.issued2005-02
dc.identifier.citationRen, C., Yu, H.Y., Wang, X.P., Ma, H.H.H., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Tung, C.H., Balasubramanian, N., Huan, A.C.H., Pan, J.S., Kwong, D.-L. (2005-02). Thermally robust TaTbxN metal gate electrode for n-MOSFETs applications. IEEE Electron Device Letters 26 (2) : 75-77. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.841469
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83197
dc.description.abstractIn this letter, we study Terbium (Tb)-incorporated TaN (TaTb xN) as a thermally robust N-type metal gate electrode for the first time. The work function of the Ta0.94Tb 0.06Ny metal gate is determined to be ∼ 4.23 eV after rapid thermal anneal at 1000 °C for 30 s, and can be further tuned by varying the Tb concentration. Moreover, the TaTb xN-SiO2 gate stack exhibits excellent thermal stability up to 1000 °C with no degradation to the equivalent oxide thickness, gate leakage, and time-dependent dielectric breakdown (TDDB) characteristics. These results suggest that Tb-incorporated TaN (TaTbxN) could be a promising metal gate candidate for n-MOSFET in a dual-metal gate Si CMOS process. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2004.841469
dc.sourceScopus
dc.subjectCMOS
dc.subjectDual-metal gate
dc.subjectN-type
dc.subjectTaTbxN
dc.subjectThermal stability
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2004.841469
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume26
dc.description.issue2
dc.description.page75-77
dc.description.codenEDLED
dc.identifier.isiut000226479100009
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