Please use this identifier to cite or link to this item:
Title: Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body
Authors: Lim, Y.F.
Xiong, Y.Z.
Singh, N.
Yang, R.
Jiang, Y.
Chan, D.S.H. 
Loh, W.Y.
Bera, L.K.
Lo, G.Q.
Balasubramanian, N.
Kwong, D.-L.
Keywords: FinFET
Flicker (1/f) noise
Gate-all-around (GAA)
Random telegraph signals (RTS)
Issue Date: Sep-2006
Citation: Lim, Y.F., Xiong, Y.Z., Singh, N., Yang, R., Jiang, Y., Chan, D.S.H., Loh, W.Y., Bera, L.K., Lo, G.Q., Balasubramanian, N., Kwong, D.-L. (2006-09). Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body. IEEE Electron Device Letters 27 (9) : 765-768. ScholarBank@NUS Repository.
Abstract: For the first time, the random telegraph signal (RTS) and its corresponding flicker noise (1/f) were investigated in gate-all-around p-type Si-FinFETs. For a device with gate width of ∼ 100 nm (fin height) and length of ∼ 200 nm, the typical RTS capture/emission time constants were ∼ 0.1-1 ms. Very large RTS amplitudes (ΔId/Id up to 25%) were observed, which is an effect attributable to the extreme device scaling and/or interface quality of FinFETs. The estimated scattering coefficients (α ∼ 10-12 - 10-13) are found to be higher than typical values obtained from MOSFETs. These findings demonstrate the relevance of RTS for FinFET operation. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/LED.2006.880640
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Dec 1, 2022


checked on Dec 1, 2022

Page view(s)

checked on Nov 24, 2022

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.