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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Refined By:
Department:  COLLEGE OF DESIGN AND ENGINEERING
Author:  Li, M.F.
Type:  Conference Paper

Results 1-12 of 12 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12005A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performanceWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C. ; Chi, R.; Yu, X.F.; Shen, C.; Du, A.Y.; Chan, D.S.H. ; Kwong, D.-L.
22004A novel surface passivation process for HfO 2 Ge MOSFETsWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Du, A.Y.; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
32005BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Balasubramanian, N.
42004Frequency dependent dynamic charge trapping in HfO 2 and threshold voltage instability in MOSFETsShen, C.; Yu, H.Y. ; Wang, X.P.; Li, M.-F. ; Yeo, Y.-C. ; Chan, D.S.H. ; Bera, K.L.; Kwong, D.L.
52003High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC ApplicationsHu, H.; Ding, S.-J. ; Lim, H.F. ; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Yu, X.F.; Chen, J.H. ; Yong, Y.F.; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Tung, C.H.; Du, A.; My, D.; Foo, P.D.; Chin, A.; Kwong, D.-L.
62007Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistorsAgrawal, N.; Chen, J. ; Hui, Z.; Yeo, Y.-C. ; Lee, S. ; Chan, D.S.H. ; Li, M.-F. ; Samudra, G.S. 
72005Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devicesRen, C.; Chan, D.S.H. ; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Kwong, D.-L.
8Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
92004Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETsShen, C.; Li, M.F. ; Wang, X.P.; Yu, H.Y. ; Feng, Y.P. ; Lim, A.T.-L. ; Yeo, Y.C. ; Chan, D.S.H. ; Kwong, D.L.
102004Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodesZhu, S. ; Chen, J. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Li, M.F. ; Lee, S.J. ; Zhu, C. ; Chan, D.S.H. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
112004Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devicesLi, M.F. ; Yu, H.Y. ; Hou, Y.T. ; Kang, J.F. ; Wang, X.P.; Shen, C.; Ren, C.; Yeo, Y.C. ; Zhu, C.X. ; Chan, D.S.H. ; Chin, A.; Kwong, D.L.
1210-May-2006Work function tuning of metal nitride electrodes for advanced CMOS devicesRen, C.; Faizhal, B.B.; Chan, D.S.H. ; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Balasubramanian, N.; Kwong, D.-L.