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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Refined By:
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Author:  Chan, D.S.H.
Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 81-100 of 139 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
8112-Feb-2009Nonvolatile Flash Memory Device and Method for Producing Dielectric Oxide Nanodots on Silicon DioxideCHEN JINGHAO ; YOO WON JONG ; CHAN SIU HUNG DANIEL 
82Nov-2004Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performanceChen, J.H. ; Wang, Y.Q.; Yoo, W.J. ; Yeo, Y.-C. ; Samudra, G. ; Chan, D.S.H. ; Du, A.Y.; Kwong, D.-L.
832-Jan-2007Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60Ling, Q.-D. ; Lim, S.-L.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
842009Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channelJiang, Y.; Singh, N.; Liow, T.Y.; Lim, P.C.; Tripathy, S.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.-L.
85Feb-2010Origin of different dependences of open-circuit voltage on the electrodes in layered and bulk heterojunction organic photovoltaic cellsZhang, C. ; Tong, S.-W. ; Jiang, C.-Y.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
862008Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contactsJiang, Y.; Liow, T.Y.; Singh, N.; Tan, L.H.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.L.
872009Performance improvement in charge-trap flash memory using lanthanum-based high-κ blocking oxideHe, W. ; Pu, J. ; Chan, D.S.H. ; Cho, B.J.
88Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
8915-Aug-2005Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistorsRen, C.; Chan, D.S.H. ; Wang, X.P.; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Huan, A.C.H.; Kwong, D.-L.
9028-Feb-2005Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectricShen, C.; Li, M.F. ; Yu, H.Y. ; Wang, X.P.; Yeo, Y.-C. ; Chan, D.S.H. ; Kwong, D.-L.
91Oct-2008Polymer electronic memories: Materials, devices and mechanismsLing, Q.-D. ; Liaw, D.-J.; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
92Oct-2008Polymer electronic memories: Materials, devices and mechanismsLing, Q.-D. ; Liaw, D.-J.; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
9324-Aug-2007Polymer memories: Bistable electrical switching and device performanceLing, Q.-D. ; Liaw, D.-J.; Teo, E.Y.-H. ; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
9424-Aug-2007Polymer memories: Bistable electrical switching and device performanceLing, Q.-D. ; Liaw, D.-J.; Teo, E.Y.-H. ; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
952008Process and material properties of HfLaOx prepared by atomic layer depositionHe, W. ; Chan, D.S.H. ; Kim, S.-J.; Kim, Y.-S.; Kim, S.-T.; Cho, B.J.
9629-Apr-2003Pulsed single contact optical beam induced current analysis of integrated circuitsMIN, CHIN JIANN; KOLACHINA, SIVARAMAKRISHNA; PHANG, JACOB C. H. ; CHAN, DANIEL S. H. 
97Sep-2006Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow bodyLim, Y.F.; Xiong, Y.Z.; Singh, N.; Yang, R.; Jiang, Y.; Chan, D.S.H. ; Loh, W.Y.; Bera, L.K.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
982008Reduced carrier backscattering in heterojunction SiGe nanowire channelsJiang, Y.; Singh, N.; Liow, T.Y.; Lo, G.Q.; Chan, D.S.H. ; Kwong, D.L.
992006Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technologyYang, R.; Loh, W.Y.; Yu, M.B.; Xiong, Y-.Z.; Choy, S.F.; Jiang, Y.; Chan, D.S.H. ; Lim, Y.F.; Bera, L.K.; Wong, L.Y.; Li, W.H.; Du, A.Y.; Tung, C.H.; Hoe, K.M.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
100Jun-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Yu, X.; Li, M.-F. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Rustagi, S.C.; Chin, A.; Kwong, D.-L.