1. ScholarBank@NUS

Chan Siu Hung,Daniel

rp07001

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Refined By:
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Author:  Chan, D.S.H.
Department:  ELECTRICAL ENGINEERING
Author:  Lou, C.L.

Results 1-20 of 22 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
1Jul-1997A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET'sLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
21999An improved drain-current-conductance method with substrate back-biasingTan, C.B.; Chim, W.K. ; Chan, D.S.H. ; Lou, C.L.
31997Characterization of the plasma-induced effective mobility degradation of LATID NMOSFETsLou, C.L.; Song, J.; Tan, C.B.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y. 
41997Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structureJie, B.B.; Li, M.F. ; Lou, C.L.; Lo, K.F.; Chim, W.K. ; Chan, D.S.H. 
57-Sep-1997Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopyChim, W.K. ; Chan, D.S.H. ; Tao, J.M. ; Lou, C.L.; Leang, S.E.; Teow, C.K.
61997Effective channel mobility and series resistance extraction for fresh and hot-carrier stressed graded junction MOSFETs using a single deviceLou, C.L.; Tan, C.B.; Chim, W.K. ; Chan, D.S.H. 
71995Hot-carrier induced degradation in the subthreshold characteristics of LDD PMOSFETsLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y. 
81995Hot-carrier induced degradation in the subthreshold characteristics of LDD PMOSFETsLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y. 
9Oct-1996Hot-carrier induced degradation of polysilicon and tungsten polycide gate MOSFETs under maximum substrate and gate current stressesLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
10Nov-1996Hot-carrier reliability of n- and p-channel MOSFETs with polysilicon and CVD tungsten-polycide gateLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
11Aug-1997Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETsLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
12Aug-1997Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETsLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
131999Integrated (automated) photon emission microscope and MOSFET characterization system for combined microscopic and macroscopic device analysisNg, T.H.; Chim, W.K. ; Chan, D.S.H. ; Phang, J.C.H. ; Liu, Y.Y.; Lou, C.L.; Leang, S.E.; Tao, J.M. 
141999Integrated (automated) photon emission microscope and MOSFET characterization system for combined microscopic and macroscopic device analysisNg, T.H.; Chim, W.K. ; Chan, D.S.H. ; Phang, J.C.H. ; Liu, Y.Y.; Lou, C.L.; Leang, S.E.; Tao, J.M. 
15Dec-1997Investigation of interface traps in LDD pMOST's by the DCIV methodJie, B.B.; Li, M.F. ; Lou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Lo, K.F.
16Dec-1997Investigation of interface traps in LDD pMOST's by the DCIV methodJie, B.B.; Li, M.F. ; Lou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Lo, K.F.
17May-1998Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressingQin, W.H.; Chim, W.K. ; Chan, D.S.H. ; Lou, C.L.
18May-1998Modelling the degradation in the subthreshold characteristics of submicrometre LDD PMOSFETs under hot-carrier stressingQin, W.H.; Chim, W.K. ; Chan, D.S.H. ; Lou, C.L.
191997Modelling the hot-carrier induced degradation in the subthreshold characteristics of submicrometer LDD PMOSFETsLou, C.L.; Qin, W.H.; Chim, W.K. ; Chan, D.S.H. 
201997Modelling the hot-carrier induced degradation in the subthreshold characteristics of submicrometer LDD PMOSFETsLou, C.L.; Qin, W.H.; Chim, W.K. ; Chan, D.S.H.