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|Title:||Effective channel mobility and series resistance extraction for fresh and hot-carrier stressed graded junction MOSFETs using a single device||Authors:||Lou, C.L.
|Issue Date:||1997||Citation:||Lou, C.L.,Tan, C.B.,Chim, W.K.,Chan, D.S.H. (1997). Effective channel mobility and series resistance extraction for fresh and hot-carrier stressed graded junction MOSFETs using a single device. Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA : 140-145. ScholarBank@NUS Repository.||Abstract:||We present a new measurement technique - the drain current-conductance method (DCCM) to extract the gate-bias dependent effective channel mobility (μeff) and series resistances (Rs and Rd) of drain-engineered MOSFETs. Experimental verification for devices with differing channel lengths and after hot-carrier stresses showed that this technique is accurate and effective. The parameters extracted has provided further insight into the asymmetries of graded junctions, and the damage mechanisms of hot-carrier degraded MOSFETs.||Source Title:||Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/81404|
|Appears in Collections:||Staff Publications|
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