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|Title:||Integrated (automated) photon emission microscope and MOSFET characterization system for combined microscopic and macroscopic device analysis||Authors:||Ng, T.H.
|Issue Date:||1999||Citation:||Ng, T.H.,Chim, W.K.,Chan, D.S.H.,Phang, J.C.H.,Liu, Y.Y.,Lou, C.L.,Leang, S.E.,Tao, J.M. (1999). Integrated (automated) photon emission microscope and MOSFET characterization system for combined microscopic and macroscopic device analysis. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 113-118. ScholarBank@NUS Repository.||Abstract:||This article describes the design and performance of an integrated characterization system for the physical microscopic analysis and macroscopic reliability characterization of MOSFETs under hot-carrier stressing conditions. The system includes the photon emission microscopic localization of the photon emitting device(s), spectroscopic measurement of the emitted light, hot-carrier stressing and lifetime estimation, charge-pumping measurement and profiling, gated-diode measurement, capacitance-voltage measurement and flicker-noise characterization.||Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/81491|
|Appears in Collections:||Staff Publications|
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