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Osipowicz Thomas

rp05639

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Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Publications

Results 21-40 of 184 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
2118-May-2001Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEMHo, Y.W.; Ng, V. ; Choi, W.K. ; Ng, S.P.; Osipowicz, T. ; Seng, H.L. ; Tjui, W.W.; Li, K.
2220-Mar-2002Characteristics of CVD diamond films in detecting UV, x-ray and alpha particleAhn, J.; Gan, B.; Zhang, Q.; Rusli; Yoon, S.F.; Ligatchev, V.; Wang, S.-G.; Huang, Q.-F.; Chew, K.; Patran, A.-C.; Serban, A.; Liu, M.-H.; Lee, S.; Bettiol, A.A. ; Osipowicz, T. ; Watt, F. 
3Mar-2002Characteristics of nickel-containing carbon films deposited using electron cyclotron resonance CVDHuang, Q.F.; Yoon, S.F.; Rusli; Zhang, Q.; Ahn, J.; Teo, E.J. ; Osipowicz, T. ; Watt, F. 
415-Oct-2004Characterization of HfO2/Si(0 0 1) interface with high-resolution rutherford backscattering spectroscopyNakajima, K.; Joumori, S.; Suzuki, M.; Kimura, K.; Osipowicz, T. ; Tok, K.L.; Zheng, J.Z.; See, A.; Zhang, B.C.
57-Aug-2000Characterization of interfacial reactions between ionized metal plasma deposited Al-0.5 wt.% Cu and Ti on SiO2Lee, Y.K.; Maung Latt, K.; Li, S.; Osipowicz, T. ; Chiam, S.Y. 
62000Characterization of Ni- and Ni(Pt)-silicide formation on narrow polycrystalline Si lines by Raman spectroscopyLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Osipowicz, T. ; Ho, C.S.; Chen, G.L.; Chan, L.
7Mar-2009Characterization of silver selenide thin films grown on Cr-covered Si substratesMohanty, B.C.; Malar, P. ; Osipowicz, T. ; Murty, B.S.; Varma, S.; Kasiviswanathan, S.
829-Sep-2000Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2Lee, Y.K.; Latt, K.M.; JaeHyung, K.; Osipowicz, T. ; Sher-Yi, C. ; Lee, K.
91-Dec-2001Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structureLatt, K.M.; Sher-Yi, C. ; Osipowicz, T. ; Lee, K.; Lee, Y.K.
101-May-2000Composition and diffusion of nitrogenated carbon into the magnetic layerTomcik, B.; Osipowicz, T. ; Huan, C.H. 
111-Aug-2002Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized siliconChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; Osipowicz, T. ; See, A.; Chan, L.
12Sep-2004Critical review of the current status of thickness measurements for ultrathin SiO 2 on Si Part V: Results of a CCQM pilot studySeah, M.P.; Spencer, S.J.; Bensebaa, F.; Vickridge, I.; Danzebrink, H.; Krumrey, M.; Gross, T.; Oesterle, W.; Wendler, E.; Rheinländer, B.; Azuma, Y.; Kojima, I.; Suzuki, N.; Suzuki, M.; Tanuma, S.; Moon, D.W.; Lee, H.J.; Cho, H.M.; Chen, H.Y.; Wee, A.T.S. ; Osipowicz, T. ; Pan, J.S.; Jordaan, W.A.; Hauert, R.; Klotz, U.; Van Der Marel, C.; Verheijen, M.; Tamminga, Y.; Jeynes, C.; Bailey, P.; Biswas, S.; Falke, U.; Nguyen, N.V.; Chandler-Horowitz, D.; Ehrstein, J.R.; Muller, D.; Dura, J.A.
131997Deep ion beam lithography for micromachining applicationsSpringham, S.V.; Osipowicz, T. ; Sanchez, J.L.; Lee, S.; Watt, F. 
141-Aug-2004Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescenceTeo, E.J. ; Bettiol, A.A. ; Osipowicz, T. ; Hao, M.; Chua, S.J. ; Liu, Y.Y. 
15Apr-2005Determination of local lattice tilt in Si1-xGex virtual substrate using high resolution channeling contrast microscopySeng, H.L. ; Osipowicz, T. ; Zhang, J.; Tok, E.S. ; Watt, F. 
16Jul-2002Deuterium-oxygen exchange on diamond (100)-A study by ERDA, RBS and TOF-SIMSLoh, K.P. ; Xie, X.N. ; Zhang, X. ; Teo, E.J. ; Osipowicz, T. ; Lai, M.Y.; Yakovlev, N.
171997Development of the IBIC (Ion Beam Induced Charge) technique for IC failure analysisOsipowicz, T. ; Sanchez, J.L.; FWatt; Kolachina, S.; Ong, V.K.S. ; Chan, D.S.H. ; Phang, J.C.H. 
181-Feb-2000Diamond-like film as a corrosion protective layer on the hard diskTomcik, B.; Osipowicz, T. ; Lee, J.Y. 
1915-Dec-2001Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxideLatt, K.M.; Lee, Y.K.; Seng, H.L. ; Osipowicz, T. 
20Jun-1999Distribution of Ag in Ag-doped YBa2Cu3O7-δ thin film prepared by dual-beam pulsed-laser depositionZhou, W.Z.; Chua, D.H.C.; Xu, S.Y. ; Ong, C.K. ; Feng, Y.P. ; Osipowicz, T. ; Chen, M.S.