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|Title:||Characterization of HfO2/Si(0 0 1) interface with high-resolution rutherford backscattering spectroscopy||Authors:||Nakajima, K.
|Issue Date:||15-Oct-2004||Citation:||Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C. (2004-10-15). Characterization of HfO2/Si(0 0 1) interface with high-resolution rutherford backscattering spectroscopy. Applied Surface Science 237 (1-4) : 416-420. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2004.06.087||Abstract:||Characterization of a HfO2 (3nm)/Si(0 0 1) interface prepared by atomic-layer chemical vapor deposition has been performed with high-resolution Rutherford backscattering spectroscopy (HRBS). Strain depth profile in the interface region has been measured with a combination of HRBS and channeling technique. It is found that a thin interface SiOx layer lies between the HfO2 film and the Si(0 0 1) substrate, and that compressive strain in the direction perpendicular to the surface is present in the Si(0 0 1) substrate near the SiOx/Si(0 0 1) interface. The observed maximum strain is about 1% at the interface and the strained region extends down to ∼3 nm from the interface. © 2004 Elsevier B.V. All rights reserved.||Source Title:||Applied Surface Science||URI:||http://scholarbank.nus.edu.sg/handle/10635/98651||ISSN:||01694332||DOI:||10.1016/j.apsusc.2004.06.087|
|Appears in Collections:||Staff Publications|
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