Please use this identifier to cite or link to this item:
|Title:||Characterization of HfO2/Si(0 0 1) interface with high-resolution rutherford backscattering spectroscopy||Authors:||Nakajima, K.
|Issue Date:||15-Oct-2004||Citation:||Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C. (2004-10-15). Characterization of HfO2/Si(0 0 1) interface with high-resolution rutherford backscattering spectroscopy. Applied Surface Science 237 (1-4) : 416-420. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2004.06.087||Abstract:||Characterization of a HfO2 (3nm)/Si(0 0 1) interface prepared by atomic-layer chemical vapor deposition has been performed with high-resolution Rutherford backscattering spectroscopy (HRBS). Strain depth profile in the interface region has been measured with a combination of HRBS and channeling technique. It is found that a thin interface SiOx layer lies between the HfO2 film and the Si(0 0 1) substrate, and that compressive strain in the direction perpendicular to the surface is present in the Si(0 0 1) substrate near the SiOx/Si(0 0 1) interface. The observed maximum strain is about 1% at the interface and the strained region extends down to ∼3 nm from the interface. © 2004 Elsevier B.V. All rights reserved.||Source Title:||Applied Surface Science||URI:||http://scholarbank.nus.edu.sg/handle/10635/98651||ISSN:||01694332||DOI:||10.1016/j.apsusc.2004.06.087|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 25, 2020
WEB OF SCIENCETM
checked on Sep 17, 2020
checked on Sep 27, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.