Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2004.06.087
Title: Characterization of HfO2/Si(0 0 1) interface with high-resolution rutherford backscattering spectroscopy
Authors: Nakajima, K.
Joumori, S.
Suzuki, M.
Kimura, K.
Osipowicz, T. 
Tok, K.L.
Zheng, J.Z.
See, A.
Zhang, B.C.
Keywords: HfO2/Si(0 01)
High-resolution
Strain profile
Issue Date: 15-Oct-2004
Citation: Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C. (2004-10-15). Characterization of HfO2/Si(0 0 1) interface with high-resolution rutherford backscattering spectroscopy. Applied Surface Science 237 (1-4) : 416-420. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2004.06.087
Abstract: Characterization of a HfO2 (3nm)/Si(0 0 1) interface prepared by atomic-layer chemical vapor deposition has been performed with high-resolution Rutherford backscattering spectroscopy (HRBS). Strain depth profile in the interface region has been measured with a combination of HRBS and channeling technique. It is found that a thin interface SiOx layer lies between the HfO2 film and the Si(0 0 1) substrate, and that compressive strain in the direction perpendicular to the surface is present in the Si(0 0 1) substrate near the SiOx/Si(0 0 1) interface. The observed maximum strain is about 1% at the interface and the strained region extends down to ∼3 nm from the interface. © 2004 Elsevier B.V. All rights reserved.
Source Title: Applied Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/98651
ISSN: 01694332
DOI: 10.1016/j.apsusc.2004.06.087
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

7
checked on Sep 19, 2018

WEB OF SCIENCETM
Citations

7
checked on Sep 19, 2018

Page view(s)

24
checked on Jul 27, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.