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|Title:||Characteristics of nickel-containing carbon films deposited using electron cyclotron resonance CVD||Authors:||Huang, Q.F.
|Issue Date:||Mar-2002||Citation:||Huang, Q.F., Yoon, S.F., Rusli, Zhang, Q., Ahn, J., Teo, E.J., Osipowicz, T., Watt, F. (2002-03). Characteristics of nickel-containing carbon films deposited using electron cyclotron resonance CVD. Diamond and Related Materials 11 (3-6) : 1031-1035. ScholarBank@NUS Repository. https://doi.org/10.1016/S0925-9635(01)00635-5||Abstract:||Two sets of nickel-containing carbon (Ni-C/H) films were deposited using an electron-cyclotron resonance chemical vapor deposition system in conjunction with two biased screen grids. The films were characterized using Raman scattering. Their resistivity and hardness were evaluated as a function of the gas flow ratio (CH4/Ar). Rutherford back scattering analysis showed that the atomic fraction of Ni incorporated in the films decreases drastically from 35 to 1.4%, following increase in the CH4/Ar ratio. Correspondingly, the film resistivity increases by 11 orders of magnitude. In contrast, the hardness decreases and the film with a Ni atomic fraction of 12% has a hardness of approximately 16 GPa. Vacuum annealing at 200°C for 1 h immediately after the film deposition resulted in an increase in resistivity. The threshold field for field emission decreases with decreasing Ni incorporation in the film and a value of approximately 4 V/μm can be obtained for the film with the lowest Ni atomic fraction of 1.4%. © 2002 Elsevier Science B.V. All rights reserved.||Source Title:||Diamond and Related Materials||URI:||http://scholarbank.nus.edu.sg/handle/10635/93259||ISSN:||09259635||DOI:||10.1016/S0925-9635(01)00635-5|
|Appears in Collections:||Staff Publications|
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