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Title: Characteristics of nickel-containing carbon films deposited using electron cyclotron resonance CVD
Authors: Huang, Q.F.
Yoon, S.F.
Zhang, Q.
Ahn, J.
Teo, E.J. 
Osipowicz, T. 
Watt, F. 
Keywords: Carbon
Field emission
Issue Date: Mar-2002
Citation: Huang, Q.F., Yoon, S.F., Rusli, Zhang, Q., Ahn, J., Teo, E.J., Osipowicz, T., Watt, F. (2002-03). Characteristics of nickel-containing carbon films deposited using electron cyclotron resonance CVD. Diamond and Related Materials 11 (3-6) : 1031-1035. ScholarBank@NUS Repository.
Abstract: Two sets of nickel-containing carbon (Ni-C/H) films were deposited using an electron-cyclotron resonance chemical vapor deposition system in conjunction with two biased screen grids. The films were characterized using Raman scattering. Their resistivity and hardness were evaluated as a function of the gas flow ratio (CH4/Ar). Rutherford back scattering analysis showed that the atomic fraction of Ni incorporated in the films decreases drastically from 35 to 1.4%, following increase in the CH4/Ar ratio. Correspondingly, the film resistivity increases by 11 orders of magnitude. In contrast, the hardness decreases and the film with a Ni atomic fraction of 12% has a hardness of approximately 16 GPa. Vacuum annealing at 200°C for 1 h immediately after the film deposition resulted in an increase in resistivity. The threshold field for field emission decreases with decreasing Ni incorporation in the film and a value of approximately 4 V/μm can be obtained for the film with the lowest Ni atomic fraction of 1.4%. © 2002 Elsevier Science B.V. All rights reserved.
Source Title: Diamond and Related Materials
ISSN: 09259635
DOI: 10.1016/S0925-9635(01)00635-5
Appears in Collections:Staff Publications

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