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Osipowicz Thomas

rp05639

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Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Publications

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Department:  ELECTRICAL AND COMPUTER ENGINEERING
Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 1-20 of 28 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
12002A study of the decomposition of GaN during annealing over a wide range of temperaturesRana, M.A.; Choi, H.W.; Breese, M.B.H. ; Osipowicz, T. ; Chua, S.J. ; Watt, F. 
213-Oct-2003A study of the material loss and other processes involved during annealing of GaN at growth temperaturesRana, M.A.; Osipowicz, T. ; Choi, H.W.; Breese, M.B.H. ; Chua, S.J. 
32005Analysis of E-field distributions within high-power devices using IBIC microscopyZmeck, M.; Balk, L.J.; Heiderhoff, R.; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. ; Niedernostheide, F.-J.; Schulze, H.-J.
42005Analysis of premature breakdown in high-power devices using IBIC microscopyZmeck, M.; Balk, L.J.; Pugatschow, A.; Niedernostheide, F.-J.; Schulze, H.-J.; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. 
518-May-2001Characterisation of Ge nanocrystals in co-sputtered Ge+SiO2 system using raman spectroscopy, RBS and TEMHo, Y.W.; Ng, V. ; Choi, W.K. ; Ng, S.P.; Osipowicz, T. ; Seng, H.L. ; Tjui, W.W.; Li, K.
61-Aug-2002Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized siliconChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; Osipowicz, T. ; See, A.; Chan, L.
71-Aug-2004Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescenceTeo, E.J. ; Bettiol, A.A. ; Osipowicz, T. ; Hao, M.; Chua, S.J. ; Liu, Y.Y. 
815-Feb-2002Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicideTan, W.L.; Pey, K.L. ; Chooi, S.Y.M.; Ye, J.H.; Osipowicz, T. 
9Sep-2002Effect of ion implantation on layer inversion of Ni silicided poly-SiLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; Chan, L.
10Jan-2002Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stackLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; See, A.
1115-Mar-2004Epitaxial growth of co-doped Eu and Sm in α-Zn0.05Sr 0.95S on (0 0 1)MgO substrate using α-MnS buffer layerChen, C.; Teo, K.L. ; Chong, T.C. ; Wu, Y.H. ; Osipowicz, T. ; Anisur Rahman, Md.
122005Formation and thermal stability of nickel germanide on germanium substrateZhang, Q.; Nan, W.U.; Osipowicz, T. ; Bera, L.K.; Zhu, C. 
131-Nov-2010Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser annealLim, P.S.Y.; Chi, D.Z.; Lim, P.C.; Wang, X.C.; Chan, T.K. ; Osipowicz, T. ; Yeo, Y.-C. 
1421-Jan-2004Ion beam induced charge microscopy studies of power diodesZmeck, M.; Balk, L.J.; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. ; Niedernostheide, F.-J.; Schulze, H.-J.
15Mar-2002Layer inversion of Ni(Pt)Si on mixed phase Si filmsLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Osipowicz, T. ; See, A.
1618-May-2006Magnetic and transport properties of Ge : MMMn granular systemLi, H.; Wu, Y. ; Liu, T. ; Wang, S.; Guo, Z.; Osipowicz, T. 
17Sep-2003Modeling of deep buried structures in high-power devices based on proton beam induced charge microscopyZmeck, M.; Balk, L.; Osipowicz, T. ; Watt, F. ; Phang, J. ; Khambadkone, A. ; Niedernostheide, F.-J.; Schulze, H.-J.
1820-Nov-2002Nickel silicidation on polycrystalline silicon germanium filmsChoi, W.K. ; Pey, K.L. ; Zhao, H.B.; Osipowicz, T. ; Shen, Z.X. 
192007Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETsLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Ho, C.-S.; Hoe, K.-M.; Lai, M.Y.; Osipowicz, T. ; Lo, G.-Q.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
202007Orders of magnitude reduction in threading dislocations in ZnO grown on facet-controlled GaNChua, S.J. ; Zhou, H.L.; Pan, H. ; Osipowicz, T.