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|Title:||Modeling of deep buried structures in high-power devices based on proton beam induced charge microscopy||Authors:||Zmeck, M.
|Keywords:||Electrical field strength
|Issue Date:||Sep-2003||Citation:||Zmeck, M., Balk, L., Osipowicz, T., Watt, F., Phang, J., Khambadkone, A., Niedernostheide, F.-J., Schulze, H.-J. (2003-09). Modeling of deep buried structures in high-power devices based on proton beam induced charge microscopy. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 210 : 164-168. ScholarBank@NUS Repository. https://doi.org/10.1016/S0168-583X(03)01022-X||Abstract:||In this paper the possible application of ion beam induced charge (IBIC)-microscopy for the analysis of the electrical field distributions within the depletion regions of high-power devices is discussed. The application of a reverse bias voltage allows one to obtain information about the field distribution within the device under working conditions from IBIC measurements. Such data are useful in the design process of high-power devices because excessive fields within protection elements (e.g. field ring structures) can be avoided. Charge collection spectra taken under reverse voltages of more than 1 kV are discussed. The results have been compared with simulations of the IBIC-processes using the code MEDICI. © 2003 Elsevier B.V. All rights reserved.||Source Title:||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms||URI:||http://scholarbank.nus.edu.sg/handle/10635/51212||ISSN:||0168583X||DOI:||10.1016/S0168-583X(03)01022-X|
|Appears in Collections:||Staff Publications|
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