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Thye Shen, Andrew Wee

rp02822

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Full Name
Thye Shen, Andrew Wee
Variants
Wee, A.T.
Wee, A.T.S.
Wee A.T.S.
Thye Shen Wee, A.
Wee, A.T.S
Thye-Shen Wee, A.
Wee A.T.S
Wee, S.
Wee, A.T.-S.
Wee, A.T.A.
WEE, ANDREW THYE SHEN
Wee, T.S.
Wee, A.
Wee, Andrew T.S.
Wee, T.S.A.
Wee Thye Shen, Andrew
 
Main Affiliation
 
Faculty
 
Email
phyweets@nus.edu.sg
 

Publications

Refined By:
Author:  Liu, R.

Results 1-20 of 52 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
126-Mar-20071.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Zhang, D.H.; Ng, B.K.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
21-Jun-2006Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAsCheah, W.K.; Fan, W.J.; Yoon, S.F.; Ma, B.S.; Ng, T.K.; Liu, R. ; Wee, A.T.S. 
320-Oct-2001Annealing effects of tantalum thin films sputtered on [001] silicon substrateLiu, L. ; Gong, H. ; Wang, Y. ; Wang, J. ; Wee, A.T.S ; Liu, R. 
4Jan-2005Atomic force microscopy study of hexagonal boron nitride film growth on 6H-SiC (0001)Chen, W. ; Loh, K.P. ; Lin, M.; Liu, R. ; Wee, A.T.S. 
5Sep-2004Characterization of Cu/Ta/ultra low-k porous polymer structures for multilevel interconnectsYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Wee, A.T.S. ; Foo, P.D.
6Feb-2004Characterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometryLiu, R. ; Wee, A.T.S. ; Shen, D.H.; Takenaka, H.
7May-2005Characterizations of InzGa1-zAs1-x-y Nx Sby P-i-N structures grown on GaAs by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Tan, K.H.; Yoon, S.F.; Zhang, D.H.; Mei, T.; Liu, R. ; Wee, A.T. 
815-Jun-2004Co-doping carbon tetrabromide (CBr4) and antimony (Sb) on GaAs [1 0 0] in solid source molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Liu, R. ; Wee, A.T.S. 
910-May-2006Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integrationYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Lu, P.W.; Foo, P.D.; Wee, A.T.S. 
10Aug-2004Comparative study of Ta and TaN(N) in the barrier/ultra low k structures for deep submicron integrated circuitsYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Wee, A.T.S. ; Foo, P.D.
113-Jun-2002Comparison of nitrogen compositions in the as-grown GaNxAs 1-x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopyFan, W.J.; Yoon, S.F.; Ng, T.K.; Wang, S.Z.; Loke, W.K.; Liu, R. ; Wee, A. 
1220-Jan-2002Crystalline phase separation of InGaN layer materials prepared by metalorganic chemical vapor depositionFeng, Z.C.; Yang, T.R.; Liu, R. ; Wee, A.T.S. 
132003Defects and surfactant action of antimony on GaAs and GaAs 1-xNxon GaAs [100] by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Wicaksono, S.; Liu, R. ; Wee, A.T.S. 
141-Aug-2004Determination of nitrogen composition in GaNxAs1-x epilayer on GaAsFan, W.J.; Yoon, S.F.; Cheah, W.K.; Loke, W.K.; Ng, T.K.; Wang, S.Z.; Liu, R. ; Wee, A. 
15Apr-2003Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surfacePrice, R.W.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Woods, N.J.; Zhang, J.
1627-Oct-2003Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structureHo, V.; Teo, L.W.; Choi, W.K. ; Chim, W.K. ; Tay, M.S.; Antoniadis, D.A.; Fitzgerald, E.A.; Du, A.Y.; Tung, C.H.; Liu, R. ; Wee, A.T.S. 
17Aug-2003Effects of first rapid thermal annealing temperature on Co silicide formationPeng, H.J.; Shen, Z.X. ; Lim, E.H.; Lai, C.W.; Liu, R. ; Wee, A.T.S. ; Sameer, A.; Dai, J.Y.; Zhang, B.C.; Zheng, J.Z.
182006Effects of O2 dissociation on a porous platinum coating in the thermal oxidation of GaAsHultquist, G.; Graham, M.J.; Wee, A.T.S. ; Liu, R. ; Sproule, G.I.; Dong, Q.; Anghel, C.
19Sep-2005GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layerCheah, W.K.; Fan, W.J.; Yoon, S.F.; Zhang, D.H.; Ng, B.K.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
2014-Feb-2002Growth mechanisms in thin film epitaxy of Si/SiGe from hydridesZhang, J.; Woods, N.J.; Breton, G.; Price, R.W.; Hartell, A.D.; Lau, G.S.; Liu, R. ; Wee, A.T.S. ; Tok, E.S.