Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
 
 
Email
elezhucx@nus.edu.sg
 

Refined By:
Author:  Zhu, C.-X.
Department:  COLLEGE OF DESIGN AND ENGINEERING

Results 81-100 of 231 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
81Oct-2004Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterpartsDing, S.-J. ; Hu, H.; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Du, A.Y.; Chin, A.; Kwong, D.-L.
8210-Oct-2006Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectricsSamanta, P.; Man, T.Y.; Chan, A.C.K.; Zhang, Q.; Zhu, C. ; Chan, M.
83Feb-2006Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gateZhu, S. ; Singh, J.; Zhu, C. ; Du, A.; Li, M.F. 
842005Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit applicationYang, T.; Li, M.F. ; Shen, C.; Ang, C.H.; Zhu, C. ; Yeo, Y.C. ; Samudra, G. ; Rustagi, S.C.; Yu, M.B.; Kwong, D.L.
85Nov-2005Fast DNBTI components in p-MOSFET with SiON dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Rustagi, S.C.; Yu, M.B.; Kwong, D.-L.
862006Fast Vth instability in HfO2 gate dielectric MOSFETs and Its impact on digital circuitsShen, C.; Yang, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C.X. ; Rustagi, S.C.; Yut, M.B.; Kwong, D.-L.
878-Mar-2011Flash-memory effect for polyfluorenes with on-chain iridium(III) complexesLiu, S.-J.; Lin, Z.-H.; Zhao, Q.; Ma, Y.; Shi, H.-F.; Yi, M.-D.; Ling, Q.-D.; Fan, Q.-L.; Zhu, C.-X. ; Kang, E.-T. ; Huang, W.
882005Formation and thermal stability of nickel germanide on germanium substrateZhang, Q.; Nan, W.U.; Osipowicz, T. ; Bera, L.K.; Zhu, C. 
89Dec-2003Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETsYu, D.S.; Wu, C.H.; Huang, C.H.; Chin, A.; Chen, W.J.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
902003Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETsHuang, C.H.; Yu, D.S.; Chin, A.; Wu, C.H.; Chen, W.J.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
91May-2003Fully silicided NiSi gate on La2O3 MOSFETsLin, C.Y.; Ma, M.W.; Chin, A.; Yeo, Y.C. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
92Aug-2004Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobilityYu, D.S.; Chiang, K.C.; Cheng, C.F.; Chin, A.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
93Jun-2006Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivationWu, N.; Zhang, Q.; Chan, D.S.H. ; Balasubramanian, N.; Zhu, C. 
942007Ge MOS transistor technology and reliabilityZhu, C. 
952006Germanium incorporation in Hf O2 dielectric on germanium substrateZhang, Q.; Wu, N.; Lai, D.M.Y.; Nikolai, Y.; Bera, L.K.; Zhu, C. 
962003Germanium MOS: An Evaluation from Carrier Quantization and Tunneling CurrentLow, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Kwong, D.-L.; Chin, A.
9724-Oct-2005Germanium n+/p junction formation by laser thermal processHuang, J.; Wu, N.; Zhang, Q.; Zhu, C. ; Tay, A.A.O. ; Chen, G. ; Hong, M. 
982004Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stackWhang, S.J. ; Lee, S.J. ; Gao, F.; Wu, N.; Zhu, C.X. ; Pan, J.S.; Tang, L.J.; Kwong, D.L.
99Feb-2005Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gateZhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
100Feb-2005Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gateZhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.