Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2006.306095
Title: Ge MOS transistor technology and reliability
Authors: Zhu, C. 
Issue Date: 2007
Citation: Zhu, C. (2007). Ge MOS transistor technology and reliability. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 128-131. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2006.306095
Abstract: In this paper, recent developments in Ge MOS transistor technology and reliability are reviewed. High-k gate stack formation on Ge substrate is first addressed with emphasis on silicon surface passivation. Ge source/drain junction formation of using laser thermal annealing with small dopant loss is then discussed. With high performance Ge p- and n-channel MOSFETs, BTI and charge trapping are characterized. © 2006 IEEE.
Source Title: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/70410
ISBN: 1424401615
DOI: 10.1109/ICSICT.2006.306095
Appears in Collections:Staff Publications

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