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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 161-180 of 300 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
161Nov-2003Integrated Antennas on Si With over 100 GHz Performance, Fabricated Using an Optimized Proton Implantation ProcessChan, K.T.; Chin, A.; Lin, Y.D.; Chang, C.Y.; Zhu, C.X. ; Li, M.F. ; Kwong, D.L.; McAlister, S.; Duh, D.S.; Lin, W.J.
162Nov-2005Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF applicationYu, M.B.; Xiong, Y.Z.; Kim, S.-J. ; Balakumar, S.; Zhu, C. ; Li, M.-F. ; Cho, B.-J. ; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
163Dec-2002Interaction of interface-traps located at various sites in MOSFETs under stressChen, G.; Li, M.F. ; Jin, Y.
1642007Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistorsAgrawal, N.; Chen, J. ; Hui, Z.; Yeo, Y.-C. ; Lee, S. ; Chan, D.S.H. ; Li, M.-F. ; Samudra, G.S. 
165Oct-2005Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Kwong, D.-L.
166May-2001Interface traps at high doping drain extension region in sub-0.25-μm MOSTsChen, G.; Li, M.F. ; Yu, X.
16731-Dec-1997Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructuresDu, A.Y.; Li, M.F. ; Chong, T.C. ; Xu, S.J. ; Zhang, Z.; Yu, D.P.
168Jul-2002Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETsYu, H. ; Hou, Y.-T. ; Li, M.-F. ; Kwong, D.-L.
169Dec-1997Investigation of interface traps in LDD pMOST's by the DCIV methodJie, B.B.; Li, M.F. ; Lou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Lo, K.F.
170May-2003Investigation of optical gain of GaInNAs/GaAs compressive-strained quantum wellsFan, W.J.; Yoon, S.F.; Li, M.F. ; Chong, T.C. 
1712003Investigation of Performance Limits of Germanium Double-Gated MOSFETsLow, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Chin, A.; Samudra, G. ; Chan, L.; Kwong, D.-L.
1721998Investigation of phonon-assisted photoluminescence in wurtzite GaN epilayerLiu, W.; Li, M.F. ; Xu, S.-J. ; Uchida, K.; Matsumoto, K.
1732000Investigation of quasi-breakdown mechanism in ultra-thin gate oxidesGuan, H.; He, Y.D. ; Li, M.F. ; Cho, B.J. ; Dong, Z.
174May-2002Investigation of quasi-breakdown mechanism through post-quasi-breakdown thermal annealingLoh, W.Y. ; Cho, B.J. ; Li, M.F. 
1752008Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectricsLi, M.-F. ; Huang, D.; WJLiu; ZYLiu; Luo, Y.; CCLiao; LFZhang; ZHGan; Wong, W.
1762004Laminated metal gate electrode with tunable work function for advanced CMOSBae, S.H.; Bai, W.P.; Wen, H.C.; Mathew, S.; Bera, L.K.; Balasubramanian, N.; Yamada, N.; Li, M.F. ; Kwong, D.L.
177Jul-2003Lanthanide (Tb)-doped HfO2 for high-density MIM capacitorsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Zhu, C. ; Chin, A.; Kwong, D.-L.
1782005Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function differenceYu, D.S.; Chin, A. ; Wu, C.H.; Li, M.-F. ; Zhu, C. ; Wang, S.J.; Yoo, W.J. ; Hung, B.F.; McAlister, S.P.
1792005Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devicesRen, C.; Chan, D.S.H. ; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Kwong, D.-L.
180Nov-2003Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton ImplantationChan, K.T.; Huang, C.H.; Chin, A.; Li, M.F. ; Kwong, D.-L.; McAlister, S.P.; Duh, D.S.; Lin, W.J.