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https://doi.org/10.1109/ICSICT.2008.4734611
| Title: | Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics | Authors: | Li, M.-F. Huang, D. WJLiu ZYLiu Luo, Y. CCLiao LFZhang ZHGan Wong, W. |
Issue Date: | 2008 | Citation: | Li, M.-F., Huang, D., WJLiu, ZYLiu, Luo, Y., CCLiao, LFZhang, ZHGan, Wong, W. (2008). Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT : 604-607. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2008.4734611 | Abstract: | Some issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics are summarized. The resolutions of these issues from our point of view are illustrated. © 2008 IEEE. | Source Title: | International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT | URI: | http://scholarbank.nus.edu.sg/handle/10635/70704 | ISBN: | 9781424421855 | DOI: | 10.1109/ICSICT.2008.4734611 |
| Appears in Collections: | Staff Publications |
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