Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LMWC.2003.819383

Title:	Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation
Authors:	Chan, K.T. Huang, C.H. Chin, A. Li, M.F. Kwong, D.-L. McAlister, S.P. Duh, D.S. Lin, W.J.
Keywords:	Implantation Inductor Q-factor RF
Issue Date:	Nov-2003
Citation:	Chan, K.T., Huang, C.H., Chin, A., Li, M.F., Kwong, D.-L., McAlister, S.P., Duh, D.S., Lin, W.J. (2003-11). Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation. IEEE Microwave and Wireless Components Letters 13 (11) : 460-462. ScholarBank@NUS Repository. https://doi.org/10.1109/LMWC.2003.819383
Abstract:	We have improved the Q-factor of a 4.6 nH spiral inductor, fabricated on a standard Si substrate, by more than 60%, by using an optimized proton implantation process. The inductor was fabricated in a 1-poly-6-metal process, and Implanted after processing. The implantation increased the substrate impedance by ∼ one order of magnitude without disturbing the inductor value before resonance. The S-parameters were well described by an equivalent circuit model. The significantly improved inductor performance and VLSI-compatible process makes the proton implantation suitable for high performance RF ICs.
Source Title:	IEEE Microwave and Wireless Components Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/56454
ISSN:	15311309
DOI:	10.1109/LMWC.2003.819383
Appears in Collections:	Staff Publications

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