Please use this identifier to cite or link to this item: https://doi.org/10.1109/LMWC.2003.819383
Title: Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation
Authors: Chan, K.T.
Huang, C.H.
Chin, A.
Li, M.F. 
Kwong, D.-L.
McAlister, S.P.
Duh, D.S.
Lin, W.J.
Keywords: Implantation
Inductor
Q-factor
RF
Issue Date: Nov-2003
Source: Chan, K.T.,Huang, C.H.,Chin, A.,Li, M.F.,Kwong, D.-L.,McAlister, S.P.,Duh, D.S.,Lin, W.J. (2003-11). Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation. IEEE Microwave and Wireless Components Letters 13 (11) : 460-462. ScholarBank@NUS Repository. https://doi.org/10.1109/LMWC.2003.819383
Abstract: We have improved the Q-factor of a 4.6 nH spiral inductor, fabricated on a standard Si substrate, by more than 60%, by using an optimized proton implantation process. The inductor was fabricated in a 1-poly-6-metal process, and Implanted after processing. The implantation increased the substrate impedance by ∼ one order of magnitude without disturbing the inductor value before resonance. The S-parameters were well described by an equivalent circuit model. The significantly improved inductor performance and VLSI-compatible process makes the proton implantation suitable for high performance RF ICs.
Source Title: IEEE Microwave and Wireless Components Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/56454
ISSN: 15311309
DOI: 10.1109/LMWC.2003.819383
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