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|Title:||Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation|
|Citation:||Chan, K.T., Huang, C.H., Chin, A., Li, M.F., Kwong, D.-L., McAlister, S.P., Duh, D.S., Lin, W.J. (2003-11). Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation. IEEE Microwave and Wireless Components Letters 13 (11) : 460-462. ScholarBank@NUS Repository. https://doi.org/10.1109/LMWC.2003.819383|
|Abstract:||We have improved the Q-factor of a 4.6 nH spiral inductor, fabricated on a standard Si substrate, by more than 60%, by using an optimized proton implantation process. The inductor was fabricated in a 1-poly-6-metal process, and Implanted after processing. The implantation increased the substrate impedance by ∼ one order of magnitude without disturbing the inductor value before resonance. The S-parameters were well described by an equivalent circuit model. The significantly improved inductor performance and VLSI-compatible process makes the proton implantation suitable for high performance RF ICs.|
|Source Title:||IEEE Microwave and Wireless Components Letters|
|Appears in Collections:||Staff Publications|
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