Please use this identifier to cite or link to this item:
|Title:||Interface traps at high doping drain extension region in sub-0.25-μm MOSTs||Authors:||Chen, G.
|Issue Date:||May-2001||Citation:||Chen, G., Li, M.F., Yu, X. (2001-05). Interface traps at high doping drain extension region in sub-0.25-μm MOSTs. IEEE Electron Device Letters 22 (5) : 233-235. ScholarBank@NUS Repository. https://doi.org/10.1109/55.919239||Abstract:||A huge bulk (or drain) current I b (or I d) peak versus gate voltage was observed for the 0.25-μm or sub-0.25-μm metal-oxide-semiconductor field effect transistors (MOSTs) with high doping concentration source/drain extension, when the drain-bulk pn junction is forward biased. This current is increased under Fowler-Nordheim (FN) or channel hot carrier (CHC) stress and is identified as thermal-trap-tunneling electron current at the drain extension-gate overlap region. It is extremely sensitive that one interface trap will induce 0.1 pA current increment of peak I b (or I d).||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82558||ISSN:||07413106||DOI:||10.1109/55.919239|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 30, 2020
WEB OF SCIENCETM
checked on Oct 22, 2020
checked on Oct 23, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.