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|Title:||Interface traps at high doping drain extension region in sub-0.25-μm MOSTs||Authors:||Chen, G.
|Issue Date:||May-2001||Citation:||Chen, G., Li, M.F., Yu, X. (2001-05). Interface traps at high doping drain extension region in sub-0.25-μm MOSTs. IEEE Electron Device Letters 22 (5) : 233-235. ScholarBank@NUS Repository. https://doi.org/10.1109/55.919239||Abstract:||A huge bulk (or drain) current I b (or I d) peak versus gate voltage was observed for the 0.25-μm or sub-0.25-μm metal-oxide-semiconductor field effect transistors (MOSTs) with high doping concentration source/drain extension, when the drain-bulk pn junction is forward biased. This current is increased under Fowler-Nordheim (FN) or channel hot carrier (CHC) stress and is identified as thermal-trap-tunneling electron current at the drain extension-gate overlap region. It is extremely sensitive that one interface trap will induce 0.1 pA current increment of peak I b (or I d).||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82558||ISSN:||07413106||DOI:||10.1109/55.919239|
|Appears in Collections:||Staff Publications|
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