Please use this identifier to cite or link to this item:
https://doi.org/10.1109/55.919239
DC Field | Value | |
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dc.title | Interface traps at high doping drain extension region in sub-0.25-μm MOSTs | |
dc.contributor.author | Chen, G. | |
dc.contributor.author | Li, M.F. | |
dc.contributor.author | Yu, X. | |
dc.date.accessioned | 2014-10-07T04:30:47Z | |
dc.date.available | 2014-10-07T04:30:47Z | |
dc.date.issued | 2001-05 | |
dc.identifier.citation | Chen, G., Li, M.F., Yu, X. (2001-05). Interface traps at high doping drain extension region in sub-0.25-μm MOSTs. IEEE Electron Device Letters 22 (5) : 233-235. ScholarBank@NUS Repository. https://doi.org/10.1109/55.919239 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82558 | |
dc.description.abstract | A huge bulk (or drain) current I b (or I d) peak versus gate voltage was observed for the 0.25-μm or sub-0.25-μm metal-oxide-semiconductor field effect transistors (MOSTs) with high doping concentration source/drain extension, when the drain-bulk pn junction is forward biased. This current is increased under Fowler-Nordheim (FN) or channel hot carrier (CHC) stress and is identified as thermal-trap-tunneling electron current at the drain extension-gate overlap region. It is extremely sensitive that one interface trap will induce 0.1 pA current increment of peak I b (or I d). | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/55.919239 | |
dc.source | Scopus | |
dc.subject | CMOSFETs | |
dc.subject | Hot carriers | |
dc.subject | Reliability | |
dc.subject | Semiconductor-insulator interfaces | |
dc.subject | Tunneling | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/55.919239 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 22 | |
dc.description.issue | 5 | |
dc.description.page | 233-235 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000168402100013 | |
Appears in Collections: | Staff Publications |
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