Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.919239
Title: Interface traps at high doping drain extension region in sub-0.25-μm MOSTs
Authors: Chen, G.
Li, M.F. 
Yu, X.
Keywords: CMOSFETs
Hot carriers
Reliability
Semiconductor-insulator interfaces
Tunneling
Issue Date: May-2001
Citation: Chen, G., Li, M.F., Yu, X. (2001-05). Interface traps at high doping drain extension region in sub-0.25-μm MOSTs. IEEE Electron Device Letters 22 (5) : 233-235. ScholarBank@NUS Repository. https://doi.org/10.1109/55.919239
Abstract: A huge bulk (or drain) current I b (or I d) peak versus gate voltage was observed for the 0.25-μm or sub-0.25-μm metal-oxide-semiconductor field effect transistors (MOSTs) with high doping concentration source/drain extension, when the drain-bulk pn junction is forward biased. This current is increased under Fowler-Nordheim (FN) or channel hot carrier (CHC) stress and is identified as thermal-trap-tunneling electron current at the drain extension-gate overlap region. It is extremely sensitive that one interface trap will induce 0.1 pA current increment of peak I b (or I d).
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82558
ISSN: 07413106
DOI: 10.1109/55.919239
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