ELECTRICAL AND COMPUTER ENGINEERING

Organization name
ELECTRICAL AND COMPUTER ENGINEERING


Results 921-940 of 15308 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
9212011Third order silicon (Si) nitride side-walled grating using silicon-on-insulatir (SOI)Png, C.E.; Lim, S.T.; Li, E.P.; Danner, A.J. 
9221-Jul-2009Thin-film solar cellsAberle, A.G. 
9232008Thin-film poly-SI solar cells on AIT-textured glass - Importance of the rear reflectorWidenborg, P.I.; Chan, S.V.; Walsh, T.; Aberle, A.G. 
92418-May-2006Thin Solid Films: ForewordAdeyeye, A. ; Wu, Y. 
9252005Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancementAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Wang, Y.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
624-Apr-2007Thickness dependent nano-crystallization in Ge2Sb 2Te5 films and its effect on devicesWei, X.; Shi, L.; Chong, T.C. ; Zhao, R.; Lee, H.K.
72013Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contactBera, M.K.; Liu, Y.; Kyaw, L.M.; Ngoo, Y.J.; Chor, E.F. 
82016Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayersYang, Y ; Xu, Y ; Yao, K ; Wu, Y 
9Feb-2007Thickness dependence of giant magnetoresistance in spin valves: Influence of interface and bulk scatteringWang, L.; Han, G.; Wu, Y. 
101998Thick eccentric circular iris in circular waveguideYeo, S.P. 
112016Thermoplasmonic Study of a Triple Band Optical Nanoantenna Strongly Coupled to Mid IR Molecular ModeHasan, D ; Ho, C.P ; Pitchappa, P ; Yang, B; Yang, C; Lee, C 
122009Thermomigration-induced magnetic degradation of current perpendicular to the plane giant magnetoresistance spin-valve read sensors operating at high current densityZeng, D.G.; Chung, K.-W.; Bae, S. 
1314-Mar-2013Thermoelectric performance of MX2 (M Mo,W; X S,Se) monolayersHuang, W.; Da, H. ; Liang, G. 
1415-May-1996Thermionic emission and tunneling in InGaAs/GaAs quantum well infrared detectorsKarunasiri, G. 
152013Thermally tunable photonic dual-disk resonator with wide operation rangeLi, B.; Ho, C.P.; Lee, C. 
162021Thermally stable poly‐Si tunnel junctions enabling next‐generation high‐efficiency Si solar cellsNg, Xin Ren; Lai, Donny ; Wang, Puqun ; Aberle, Armin G ; Stangl, Rolf ; Lin, Fen 
172008Thermally stable polymer memory devices based on a π -conjugated triadLing, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Chen, Y.; Zhuang, X.-D.; Zhu, C. ; Chan, D.S.H. 
182012Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETsWang, L.; Han, G. ; Su, S.; Zhou, Q. ; Yang, Y.; Guo, P.; Wang, W.; Tong, Y.; Lim, P.S.Y.; Liu, B.; Kong, E.Y.-J.; Xue, C.; Wang, Q.; Cheng, B.; Yeo, Y.-C. 
19Jun-2004Thermally stable fully silicided Hf-silicide metal-gate electrodePark, C.S. ; Cho, B.J. ; Kwong, D.-L.
207-Dec-2006Thermally stable fully silicided Hf silicide metal gate electrodePARK, CHANG SEO ; CHO, BYUNG JIN