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|Title:||Third order silicon (Si) nitride side-walled grating using silicon-on-insulatir (SOI)||Authors:||Png, C.E.
|Keywords:||Free carrier dispersion effect
|Issue Date:||2011||Citation:||Png, C.E., Lim, S.T., Li, E.P., Danner, A.J. (2011). Third order silicon (Si) nitride side-walled grating using silicon-on-insulatir (SOI). Proceedings of SPIE - The International Society for Optical Engineering 7986 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.888579||Abstract:||In this work, we demonstrate three-dimensional (3D) simulations of a third order silicon-based grating with full-width-half-maximum (FWKM) reflection bandwidth of 4nm. This is more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented. In order to make this device active, we included an active element, to be inserted in the silicon layer by way of a pin layout. The device has a low power consumption of 114nW and its intrinsic device modulation speed is predicted to function at 40.5MHz.||Source Title:||Proceedings of SPIE - The International Society for Optical Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/72017||ISBN:||9780819485540||ISSN:||0277786X||DOI:||10.1117/12.888579|
|Appears in Collections:||Staff Publications|
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