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|Title:||Thermionic emission and tunneling in InGaAs/GaAs quantum well infrared detectors||Authors:||Karunasiri, G.||Issue Date:||15-May-1996||Citation:||Karunasiri, G. (1996-05-15). Thermionic emission and tunneling in InGaAs/GaAs quantum well infrared detectors. Journal of Applied Physics 79 (10) : 8121-8123. ScholarBank@NUS Repository.||Abstract:||Thermionic emission and tunneling current measurements have been performed on a high In composition (x=0.3) pseudomorphic InxGa1-xAs/GaAs multiple quantum well infrared detector grown on GaAs substrate. It was found that at low temperatures (< 40 K), the leakage current of the detector dominates by sequential tunneling through the ground states of quantum wells while at high temperatures (>40 K) the data is in good agreement with the thermionic emission over the quantum well barriers. This indicates that the layers have good electrical quality, suggesting a low density of dislocations. The estimated barrier height relative to the ground state using the thermionic emission analysis of 101 meV is in good agreement with the measured cut-off energy of 98 meV of the photoresponse. The conduction band offset between In0.3Ga0.7As and GaAs is estimated to be about 200 meV. © 1996 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/81282||ISSN:||00218979|
|Appears in Collections:||Staff Publications|
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