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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Type:  Article
Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 141-160 of 229 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
141Nov-2004Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performanceChen, J.H. ; Wang, Y.Q.; Yoo, W.J. ; Yeo, Y.-C. ; Samudra, G. ; Chan, D.S.H. ; Du, A.Y.; Kwong, D.-L.
14225-Apr-2008Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistorTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
143Aug-2008Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressorsWong, H.-S.; Liu, F.-Y.; Ang, K.-W.; Samudra, G.; Yeo, Y.-C. 
1442008Novel rare-earth dielectric interlayers for wide NMOS work-function tunability in Ni-FUSI gatesLim, A.E.-J.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C. 
145May-2008P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performanceLee, R.T.-P. ; Tan, K.-M.; Lim, A.E.-J.; Liow, T.-Y.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
1462009Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drainTan, K.-M.; Yang, M.; Fang, W.-W.; Lim, A.E.-J.; Lee, R.T.-P. ; Liow, T.-Y.; Yeo, Y.-C. 
147Nov-2007Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regionsAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
1482007Performance enhancement of n-channel impact-ionization metal-oxide- semiconductor transistor by strain engineeringToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
149Oct-2009Performance Improvement of Sm2O3 MIM capacitors by using plasma treatment after dielectric formationYang, J.-J.; Chen, J.-D. ; Wise, R.; Yeo, Y.-C. ; Zhu, C. 
1502013Phase change liner stressor for strain engineering of P-channel FinFETsDing, Y.; Cheng, R. ; Koh, S.-M.; Liu, B.; Yeo, Y.-C. 
1512011Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technologyFang, L.W.-W.; Zhao, R.; Yeo, E.-G.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
152May-2011Phase change random access memory featuring silicide metal contact and high- κ interlayer for operation power reductionFang, L.W.-W.; Zhao, R.; Lim, K.-G.; Yang, H.; Shi, L.; Chong, T.-C.; Yeo, Y.-C. 
1532012Phase-change random access memory with multilevel resistances implemented using a dual phase-change material stackGyanathan, A.; Yeo, Y.-C. 
1544-Jul-2011Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47AsIvana; Pan, J.; Zhang, Z.; Zhang, X.; Guo, H.; Gong, X.; Yeo, Y.-C. 
1552009Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applicationsChen, J.-D. ; Yang, J.-J.; Wise, R.; Steinmann, P.; Yu, M.-B.; Zhu, C. ; Yeo, Y.-C. 
15615-Aug-2005Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistorsRen, C.; Chan, D.S.H. ; Wang, X.P.; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Huan, A.C.H.; Kwong, D.-L.
15728-Feb-2005Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectricShen, C.; Li, M.F. ; Yu, H.Y. ; Wang, X.P.; Yeo, Y.-C. ; Chan, D.S.H. ; Kwong, D.-L.
15828-Jan-2013Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrateGoh, K.-H.; Cheng, Y.; Lu Low, K.; Yu Jin Kong, E.; Chia, C.-K.; Toh, E.-H.; Yeo, Y.-C. 
15928-Jan-2013Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrateGoh, K.-H.; Cheng, Y.; Lu Low, K.; Yu Jin Kong, E.; Chia, C.-K.; Toh, E.-H.; Yeo, Y.-C. 
1602009Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)Lee, R.T.P. ; Chi, D.Z.; Yeo, Y.-C.