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Tan Leng Seow

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Full Name
Tan Leng Seow
Variants
Tan, Leng Seow
Tan, L.S.
Tan, L.-S.
 
Main Affiliation
 
Faculty
 
Email
sletanls@nus.edu.sg
 
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Publications

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Type:  Conference Paper
Department:  ELECTRICAL AND COMPUTER ENGINEERING

Results 1-20 of 29 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12008A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stackChin, H.-C.; Zhu, M. ; Lee, Z.-C.; Liu, X.; Tan, K.-M.; Lee, H.K.; Shi, L. ; Tang, L.-J.; Tung, C.-H. ; Lo, G.-Q.; Tan, L.-S. ; Yeo, Y.-C. 
22004Activation of beryllium-implanted gallium nitride by combined pulse laser and rapid thermal annealingTan, L.S. ; Wang, H.T.; Chor, E.F. 
32000Activation of beryllium-implanted GaN by two-step annealingSun, Yuejun; Tan, Leng Seow ; Chua, Soo Jin ; Prakash, Savarimuthu 
42000Activation of beryllium-implanted GaN by two-step annealingSun, Y.; Tan, L.S. ; Chua, S.J. ; Prakash, S. 
5Apr-2013AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free processLiu, X.; Zhan, C.; Wai Chan, K.; Samuel Owen, M.H.; Liu, W.; Chi, D.Z.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
62012AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Teo, K.L. ; Chen, K.J.; Yeo, Y.-C. 
72010Asymmetrical magneto-impedance effect in NiFe/SiO2/Cu composite wire with a sputtered NiFe seed layerFan, J. ; Ning, N. ; Yi, J.B. ; Tan, L.S. ; Li, X.P. 
82007Band offset measurements of the pulsed-laser-deposition-grown Sc 2O3 (111)/GaN (0001) heterostructure by X-ray photoelectron spectroscopyLiu, C.; Chor, E.F. ; Tan, L.S. ; Dong, Y.
9Jan-2002Characterization of ultrashallow dopant profiles using spreading resistance profilingTan, L.S. ; Tan, L.C.P.; Leong, M.S. ; Mazur, R.G.; Ye, C.W.
101998Design and analysis of a double barrier quantum well infrared photodetectorTan, L.S. ; Cheah, C.W.; Karunasiri, G. ; Raman, A.
112000Determination of minority carrier diffusion lengths in the denuded zones of silicon wafers by surface photovoltage measurementsTan, L.S. ; Koh, S.H.; Prakash, S. ; Choi, W.K. ; Zhang, Z.
122010Diamond-like carbon (DLC) liner with highly compressive stress formed on algan/gan mos-hemts with in situ silane surface passivation for performance enhancementLiu, X.; Liu, B.; Low, E.K.F.; Chin, H.-C.; Liu, W.; Yang, M.; Tan, L.S. ; Yeo, Y.-C. 
132000Effect of surface conditions on the measurement of minority carrier diffusion lengths using the surface photovoltage techniqueZhang, Z.; Tan, L.S. ; Koh, S.M.; Liu, H.M.; Flottmann, D.
141994Effects of low-temperature grown GaAs intermediate layers on the crystalline quality of GaAs-ON-Si epilayersChong, T.C. ; Phua, C.C.; Lau, W.S. ; Tan, L.S. 
151-Aug-2004Effects of surface plasma treatment on n-GaN ohmic contact formationLi, L.K.; Tan, L.S. ; Chor, E.F. 
162012Femtosecond laser machining of high permeability permalloyTan, L.S. ; Lee, K.S. ; Hui, M.H.; Li, X.P. 
172009Inversion-type surface channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contactsChin, H.-C.; Liu, X.; Tan, L.-S. ; Yeo, Y.-C. 
182008Laser precision engineering from microfabrication to nanoprocessingHong, M.H. ; Huang, Z.Q.; Lin, Y. ; Yun, J.; Tan, L.S. ; Shian, L.; Chong, T.C. 
191999Low-temperature grown GaAs and Al0.3Ga0.7As MISFETs - characterization and model developmentRao, Rapeta V.V.V.J. ; Chong, T.C. ; Tan, L.S. ; Lau, W.S. ; Liou, J.J.
202000Mechanisms of intersubband transition in n-type III-V quantum well superlattice and improvement on absorption for TE polarized fieldCheah, C.W.; Karunasiri, G. ; Tan, L.S.